Nakasaki Yasushi | Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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概要
- Nakasaki Yasushiの詳細を見る
- 同名の論文著者
- Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japanの論文著者
関連著者
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Nakasaki Yasushi
Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Fujita Keiji
Advanced Ulsi Process Engineering Department Process & Manufacturing Engineering Center Toshiba
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MIYAJIMA Hideshi
Advanced ULSI Process Engineering Department, Process & Manufacturing Engineering Center, Toshiba Co
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HAYASAKA Nobuo
Advanced ULSI Process Engineering Department, Process & Manufacturing Engineering Center, Toshiba Co
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Yoda Takashi
Advanced Ulsi Process Engineering Department Process & Manufacturing Engineering Center Toshiba
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Nakata Rempei
Advanced Ulsi Process Engineering Department Process & Manufacturing Engineering Center Toshiba
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Nishiyama Yukio
Advanced Ulsi Process Engineering Department Process & Manufacturing Engineering Center Toshiba
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Tsunashima Yoshitaka
Process & Manufacturing Center Semiconductor Company Toshiba Corporation
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Sato Motoyuki
Process & Manufacturing Engineering Center Toshiba Corporation Semiconductor Company
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AOYAMA Tomonori
Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation
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SEKINE Katsuyuki
Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation
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EGUCHI Kazuhiro
Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation
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SHIMADA Miyoko
Advanced ULSI Process Engineering Department, Process & Manufacturing Engineering Center, Toshiba Co
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Eguchi Kazuhiro
Semiconductor Company Toshiba Corporation
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Kaji Naruhiko
Advanced Ulsi Process Engineering Department Process & Manufacturing Engineering Center Toshiba
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SAITO Masaki
SONY Co.
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Sekine Katsuyuki
Semiconductor Company Toshiba Corporation
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Hashimoto Hideki
Toray Research Center Inc.
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Takayanagi Mariko
Semiconductor Company Toshiba Corporation
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Nakasaki Yasushi
Corporate, R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Nakasaki Yasushi
Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Nishiyama Yukio
Advanced ULSI Process Engineering Department, Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Tsunashima Yoshitaka
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Watanabe Koji
NEC Electronics Corporation, 1120 Shimokuzawa, Sagaminara, Kanagawa 229-1198, Japan
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Hasegawa Eiji
NEC Electronics Corporation, 1120 Shimokuzawa, Sagaminara, Kanagawa 229-1198, Japan
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Koyama Masato
Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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TSUNASHIMA Yoshitaka
Process & Manufactruing Engineering Center, Semiconductor Company, Toshiba Corporation
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Mitani Yuichiro
Corporate Research and Development Center, Toshiba Corporation, Yokohama 235-8522, Japan
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Hirano Izumi
Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Aoyama Tomonori
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Hashimoto Hideki
Toray Research Center, Inc., 3-7 Sonoyama 3-chome, Otsu, Shiga 520, Japan
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Saito Masaki
Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
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Shimada Miyoko
Advanced ULSI Process Engineering Department, Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Kaji Naruhiko
Advanced ULSI Process Engineering Department, Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Eguchi Kazuhiro
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Koyama Masato
Corporate Research & Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Yamaguchi Takeshi
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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Iijima Ryosuke
Corporate Research and Development Center, Toshiba Corporation, Yokohama 235-8522, Japan
著作論文
- Effects of Electron Current and Hole Current on Dielectric Breakdown in HfSiON Gate Stacks
- Performance and Reliability Improvement of HfSiON Field-Effect Transistor with Low Hafnium Concentration Cap Layer Formed by Metal Organic Chemical Vapor Deposition with Diethylsilane
- High-Performance SiOF Film Fabricated Using a Dual-Frequency-Plasma Chemical Vapor Deposition system
- Structural Studies of High-Performance Low-$k$ Dielectric Materials Improved by Electron-Beam Curing