Threshold Voltage Control of Hf-based High-$\kappa$ Gate Stack System by Fluorine Incorporation into Channel and Its Impact on Short-Channel Characteristics
スポンサーリンク
概要
- 論文の詳細を見る
A threshold voltage lowering of up to 400 mV in HfSiON/polycrystalline silicon (poly-Si) gate stack p-type metal–oxide–semiconductor field effect transistors (pMOSFETs) by fluorine incorporation into the channel is observed. Physical analysis verifies that implanted fluorine exists only in the channel region. The characteristics of the short-channel devices are investigated in detail, and an acceptor generation model by fluorine implantation is proposed. The model successfully explains the characteristics of fluorine-incorporated short-channel pMOSFETs.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-05-30
著者
-
Sato Motoyuki
Process & Manufacturing Engineering Center Toshiba Corporation Semiconductor Company
-
SEKINE Katsuyuki
Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation
-
TAKAYANAGI Mariko
Center for Semiconductor Research & Development, Toshiba Corporation Semiconductor Company
-
Kawanaka Shigeru
Center For Semiconductor Research & Development, Semiconductor Company, Toshiba Corporation
-
Azuma Atsushi
Center for Semiconductor Research and Development, Toshiba Corp., Semiconductor Co., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
-
Toyoshima Yoshiaki
Center for Semiconductor Research and Development, Toshiba Corp., Semiconductor Co., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
-
Azuma Atsushi
Center for Semiconductor Research and Development, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
-
Toyoshima Yoshiaki
Center for Semiconductor Research and Development, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
-
Nagatomo Koji
Center for Semiconductor Research and Development, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
-
Watanabe Takeshi
Center for Semiconductor Research and Development, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
-
Kojima Kenji
Center for Semiconductor Research and Development, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
-
Kawanaka Shigeru
Center for Semiconductor Research and Development, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
-
Sekine Katsuyuki
Process and Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
-
Takayanagi Mariko
Center for Semiconductor Research and Development, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
-
Sato Motoyuki
Process and Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
関連論文
- Effects of Nitrogen Concentration and Post-treatment on Reliability of HfSiON Gate Dielectrics in Inversion States
- Low-Standby-Power Complementary Metal-Oxide-Semiconductor Transistors with TiN Single Gate on 1.8 nm Gate Oxide
- The Highly Reliable Evaluation of Mobility in an Ultra Thin High-k Gate Stack with an Advanced Pulse Measurement Method
- Improvement in the asymmetric Vfb shift of poly-Si/HfSiON/Si by inserting oxygen diffusion barrier layers into the interfaces
- High-Resolution Measurement of Ultra-Shallow Structures by Scanning Spreading Resistance Microscopy
- Correlation between low-field mobility and high-field carrier velocity in quasi-ballistic-transport MISFETs scaled down to Lg=30nm (シリコン材料・デバイス・IEDM特集(先端CMOSデバイス・プロセス技術))
- Performance and Reliability Improvement of HfSiON Field-Effect Transistor with Low Hafnium Concentration Cap Layer Formed by Metal Organic Chemical Vapor Deposition with Diethylsilane
- In situ Doped Embedded-SiGe Source/Drain Technique for 32 nm Node p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor
- Threshold Voltage Control of Hf-based High-$\kappa$ Gate Stack System by Fluorine Incorporation into Channel and Its Impact on Short-Channel Characteristics
- Effects of Nitrogen Concentration and Post-treatment on Reliability of HfSiON Gate Dielectrics in Inversion States