In situ Doped Embedded-SiGe Source/Drain Technique for 32 nm Node p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor

概要

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The impacts of source and drain (S/D) doping on device performance in embedded SiGe (e-SiGe) p-channel metal–oxide–semiconductor field-effect transistor (pMOSFET) are presented. An in situ boron-doped e-SiGe S/D device exhibits higher drive current than a boron-implanted e-SiGe S/D device owing to its enhanced hole mobility and reduced parasitic resistance. The precise control of the recessed Si shape and the SiGe proximity to the channel is essential for utilizing the intrinsic benefit of an in situ boron-doped e-SiGe S/D. Moreover, it was confirmed that the channel stress induced by e-SiGe S/D increases as MOSFET size decreases. This indicates that the use of in situ boron-doped e-SiGe S/D is a promising technique for 32 nm node pMOSFET.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2008-04-25