Mitani Yuichiro | Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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- MITANI Yuichiroの詳細を見る
- 同名の論文著者
- Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporationの論文著者
関連著者
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Mitani Yuichiro
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Mitani Yuichiro
Advanced Lsi Technology Laboratory Toshiba Corporation
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Satake Hideki
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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SATAKE Hideki
Advanced LSI Technology Laboratory Research & Development Center, Toshiba Co.
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Toriumi Akira
Advanced Lsi Technology Laboratory Toshiba Corporation
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Toriumi Akira
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.
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Satake Hideki
Advanced Lsi Technology Laboratory Toshiba Corporation
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Hirano Izumi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Toriumi Akira
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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TORIUMI Akira
Advanced LSI Technology Laboratory, Toshiba Corp.
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YAMAGUCHI Takeshi
Advanced LSI Technology Laboratory, Toshiba Corporation
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MIZUSHIMA Ichiro
Microelectronics Engineering Laboratory, Toshiba Corp.
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Mizushima Ichiro
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
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SEKINE Katsuyuki
Semiconductor Company, Toshiba Corporation
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TAKAYANAGI Mariko
Semiconductor Company, Toshiba Corporation
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EGUCHI Kazuhiro
Semiconductor Company, Toshiba Corporation
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Eguchi Kazuhiro
Semiconductor Company Toshiba Corporation
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Yamaguchi Takeshi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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ITO Hitoshi
Advanced LSI Technology Laboratory, Toshiba Corp.
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Ito H
Advanced Lsi Technology Laboratory Toshiba Corporation
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Sekine Katsuyuki
Semiconductor Company Toshiba Corporation
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Takayanagi Mariko
Advanced Cmos Technology Dept. Center For Semiconductor Research & Development Semiconductor Com
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Takayanagi Mariko
Semiconductor Company Toshiba Corporation
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Koike Mitsuo
Advanced Lsi Technology Laboratory Corporate Research&development Center Toshiba Corporation
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Sugiyama Naoharu
Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation
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Matsumoto Mari
Advanced Lsi Technology Laboratory Toshiba Corporation
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KOIKE Mitsuo
Environmental Engineering Laboratory, Research and Development Center, Toshiba Corporation
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MIYANO Kiyotaka
Microelectronics Engineering Laboratory, Toshiba Corp.
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Nishiyama Akira
Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation
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KAMIMUTA Yuuichi
Advanced LSI Technology Laboratory, Toshiba Corp.
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Yoshiki Masahiko
Environmental Engineering Laboratory R&d Center Toshiba Corporation
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Mitani Yuichiro
Advanced Lsi Technology Laboratory Corporate Research And Development Center Toshiba Corporation
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Mitani Yuichiro
Advanced Semiconductor Devices Research Laboratories R&d Center Toshiba Corporation
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Mitani Yuichiro
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Mitani Yuichiro
Advanced Lsi Technology Laboratory Corporate Research&development Center Toshiba Corporation
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Koike Mitsuo
Environmental Engineering Laboratory R&d Center Toshiba Corporation
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Nishiyama Akira
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Nishiyama Akira
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Mizushima Ichiro
Microelectronics Engineering Laboratory Toshiba Corporation
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Fujita Shinobu
Advanced Lsi Technology Laboratory Toshiba Corporation
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Tomita M
Environmental Engineering Laboratory R&d Center Toshiba Corporation
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TOMITA Mitsuhiro
Environmental Engineering Laboratory, R&D Center, Toshiba Corporation
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KAMBAYASHI Sigeru
Advanced Semiconductor Devices Research Laboratories, R&D Center, Toshiba Corporation
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Satake Hideki
Mirai Association Of Super-advanced Electronics Technologies (aset)
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Satake Hideki
Mirai Project Association Of Super-advanced Electronics Technologies (aset) Aist
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Koike Masahiro
Advanced Lsi Technology Laboratory Corporate Research&development Center Toshiba Corporation
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Kamimuta Yuuichi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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KAMBAYASHI Shigeru
Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corporation
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IIJIMA Ryosuke
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
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FUKUSHIMA Noboru
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
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Kambayashi Shigeru
Advanced Lsi Technology Laboratory Corporate Research And Development Center Toshiba Corporation
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Iijima Ryosuke
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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INO Tsunehiro
Advanced LSI Technology Laboratory, Corporate Research and Development Center, TOSHIBA Corporation
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Ino Tsunehiro
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Miyano Kiyotaka
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
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Iijima Ryosuke
Advanced Lsi Technology Laboratory Corporate Research & Development Center
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Kamimuta Yuuichi
Advanced Lsi Technology Laboratory Corporate Research And Development Center Toshiba Corporation
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Kambayashi S
Toshiba Corp. Yokohama Jpn
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Ino Tsunehiro
Advanced Lsi Technology Laboratory Corporate Research And Development Center Toshiba Corporation
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Fukushima Noburu
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Zhang Li
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Takayanagi Mariko
Center For Semiconductor Research & Development Toshiba Corporation Semiconductor Company
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Matsumoto Mari
Advanced LSI Technology Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Sugiyama Naoharu
Advanced LSI Technology Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Ohba Ryuji
Flash Memory Device Technology Department, Center for Semiconductor Research and Development, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Mitani Yuichiro
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Mitani Yuichiro
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Masada Akiko
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Fukatsu Shigeto
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Masada Akiko
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Fukatsu Shigeto
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Hirano Izumi
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Fujita Shinobu
Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Fujita Shinobu
Advanced LSI Technology Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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KAMBAYASHI Sigeru
Advanced Semiconductor Devices Research Laboratories, R&D Center, Toshiba Corporation
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Tomita Mitsuhiro
Environmental Engineering Laboratory, R&D Center, Toshiba Corporation
著作論文
- Precipitation of Boron in Highly Boron-Doped Silicon
- Oxide-Mediated Solid Phase Epitaxy(OMSPE)of Silicon : A New Low-Temperature Epitaxy Technique Using Intentionally Grown Native Oxide
- Impact of Captured-Carrier Distribution on Recovery Characteristics of Positive- and Negative-Bias Temperature Instability in HfSiON/SiO_2 Gate Stack
- Influences of initial bulk traps on Negative Bias Temperature Instability of HfSiON
- Exact Trap Level Estimation of HfSiON Films with Various Atomic Compositions
- Suppression of Stress-Induced Leakage Current of Wet and Dry SiO_2 by SiD_4 Poly-Si Gate Electrode
- Double Junction Tunnel using Si Nanocrystalline Layer for Nonvolatile Memory Devices
- Deuterium Effect on Both Interface-State Generation and Stress-Induced-Leakage-Current under Fowler-Nordheim Electron Injection
- A Study of the Effect of Deuterium on Stress-Induced Leakage Current
- Time Evolution of Mean and Dispersion in Si/SiO_2 Interface States Generation Statistics
- Method of Decoupling the Bias Temperature Instability Component from Hot Carrier Degradation in Ultrathin High-$k$ Metal–Oxide–Semiconductor Field-Effect Transistors
- Experimental Clarification of Hydrogen-related Mechanism in NBT Degradation
- Evidence of Electrical and Structural Evolution of Gate Dielectric Breakdown Observed by Conductive Atomic Force Microscopy
- Suppression of Stress-Induced Leakage Current of Wet and Dry SiO2 by SiD4 Poly-Si Gate Electrode
- Reconsideration of Hydrogen Release at Ultra Thin Gate Oxide Interface