Masada Akiko | Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

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概要

関連著者

Mitani Yuichiro
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
Hirano Izumi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
Masada Akiko
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
Fukatsu Shigeto
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
Masada Akiko
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
Fukatsu Shigeto
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
Hirano Izumi
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

著作論文

Method of Decoupling the Bias Temperature Instability Component from Hot Carrier Degradation in Ultrathin High-$k$ Metal–Oxide–Semiconductor Field-Effect Transistors

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