Fujita Shinobu | Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
スポンサーリンク
概要
- Fujita Shinobuの詳細を見る
- 同名の論文著者
- Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japanの論文著者
関連著者
-
Fujita Shinobu
Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
-
Fujita Shinobu
Advanced Lsi Technology Laboratory Toshiba Corporation
-
Ohba Ryuji
Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
-
Uchida Ken
Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
-
Tanamoto Tetsufumi
Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
-
Matsumoto Mari
Advanced Lsi Technology Laboratory Toshiba Corporation
-
Tanamoto Tetsufumi
Advanced Lsi Technology Laboratory Toshiba Corporation
-
UCHIDA Ken
Advanced LSI Technology Laboratory, Research & Development Center, Toshiba Corporation
-
OHBA Ryuji
Advanced LSI Technology Laboratory, Toshiba Corporation
-
FUJITA Shinobu
Advanced LSI Technology Laboratory, Toshiba Corporation
-
Sugiyama Naoharu
Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation
-
Fujita Shinobu
Corporate R&d Center Toshiba Corporation
-
Ohba R
Advanced Lsi Technology Laboratory Toshiba Corporation
-
Uchida K
Advanced Lsi Technology Laboratory Toshiba Corporation
-
Uchida Ken
Advanced Lsi Technology Laboratory Toshiba Corporation
-
Uchida Ken
Corporate R&d Center Toshiba Corporation
-
Yasuda Shin-ichi
Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
-
SUGIYAMA Naoharu
Advanced LSI Technology Laboratory, Toshiba Corporation
-
KOGA Junji
Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation
-
MATSUMOTO Mari
Advanced LSI Technology Laboratory, Toshiba Corporation
-
YASUDA Shinichi
Advanced LSI Technology Laboratory, Toshiba Corporation
-
TANAMOTO Tetsufumi
Advanced LSI Technology Laboratory, Toshiba Corporation
-
Sugiyama N
Mirai-association Of Super-advanced Electronics Technology (aset)
-
Yasuda Shinichi
Advanced Lsi Technology Laboratory Toshiba Corporation
-
Mitani Yuichiro
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
-
Koga J
Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation
-
Koga Junji
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
-
Sugiyama Naoharu
Advanced Lsi Technology Laboratory Toshiba Corporation
-
Yasuda Shin-ichi
Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
-
Abe Keiko
Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
-
Yasuda Shin-ichi
Advanced LSI Technology Laboratory, Toshiba Corporation, Saiwai-ku, Kawasaki 212-8582, Japan
-
Matsumoto Mari
Advanced LSI Technology Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
-
Matsumoto Mari
Advanced LSI Technology Laboratory, Toshiba Corporation, Saiwai-ku, Kawasaki 212-8582, Japan
-
Sugiyama Naoharu
Advanced LSI Technology Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
-
Ohba Ryuji
Flash Memory Device Technology Department, Center for Semiconductor Research and Development, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
-
Fujita Shinobu
Advanced LSI Technology Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
-
Tanamoto Tetsufumi
Advanced LSI Technology Laboratory, Toshiba Corporation, Saiwai-ku, Kawasaki 212-8582, Japan
-
Tanamoto Tetsufumi
Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
著作論文
- Random Number Generator with 0.3MHz Generation Rate using Non-Stoichiometric Si_xN MOSFET
- Non-Volatile Doubly Stacked Si Dot Memory with Si Nano-Crystalline Layer
- Double Junction Tunnel using Si Nanocrystalline Layer for Nonvolatile Memory Devices
- The Effect of Side Traps on Ballistic Transistor in Kondo Regime
- Device Simulations in Coupled Floating-Gate Memories
- Non-Stoichiometric SixN Metal–Oxide–Semiconductor Field-Effect Transistor for Compact Random Number Generator with 0.3 Mbit/s Generation Rate