Uchida Ken | Advanced Lsi Technology Laboratory Toshiba Corporation

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著作論文

Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuation in SOI MOSFETs
Analytical Single-Electron Transistor(SET)Model for Design and Analysis of Realistic SET Circuits
Random Number Generator with 0.3MHz Generation Rate using Non-Stoichiometric Si_xN MOSFET
Non-Volatile Doubly Stacked Si Dot Memory with Si Nano-Crystalline Layer
Novel Si Quantum Memory Structure with Self-Aligned Stacked Nanocrystalline Dots
Experimental Analysis of Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory
Experimental Study of Uniaxial Stress Effects on Coulomb-limited Electron and Hole Mobility in Si-MOSFETs
SET/CMOS Hybrid for Future Low-Power LSI : Experimental Demonstration, Power Estimation, and Strategy for Its Reduction
A New Design Scheme for Logic Circuits with Single Electron Transistors
Monte Carlo Simulation of Sub-0.1μm Devices with Schottky Contact Model (Special lssue on SISPAD'99)

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