Nakabayashi Yukio | Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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概要
- Nakabayashi Yukioの詳細を見る
- 同名の論文著者
- Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporationの論文著者
関連著者
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Nakabayashi Yukio
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Saitoh Masumi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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NAKABAYASHI Yukio
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
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Numata Toshinori
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Ishihara Takamitsu
Advanced Lsi Technology Laboratory Corporate Research & Development Center
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UCHIDA Ken
Tokyo Institute of Technology
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Saitoh Masumi
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
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SAITOH Masumi
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
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NUMATA Toshinori
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
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Takagi S
Process & Manufacturing Center Semiconductor Company Toshiba Corporation
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ISHIHARA Takamitsu
Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation
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KOGA Junji
Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation
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Koga J
Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation
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Koga Junji
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Ishihara Takamitsu
Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation
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Nakabayashi Yukio
Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation
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Kobayashi Shigeki
Advanced Lsi Technology Laboratory Toshiba Corporation
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Toshinori Numata
Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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SHIMIZU Takashi
Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation
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TAKAGI Shin-ichi
Department of Frontier Informatics, Graduate School of Frontier Science, The University of Tokyo
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UCHIDA Ken
Advanced LSI Technology Laboratory, Research & Development Center, Toshiba Corporation
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Tanaka Chika
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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KOBAYASHI Shigeki
Advanced LSI Technology Laboratory, Toshiba Corporation
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Uchida Ken
Advanced Lsi Technology Laboratory Toshiba Corporation
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Uchida Ken
Department Of Biology Faculty Of Science Kumamoto University
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Takagi Shin-ichi
Department Of Electrical Engineering University Of Tokyo
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Uchida Ken
Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Ken Uchida
Department of Physical Electronics, Graduate School of Engineering, Tokyo Institute of Technology, 2-12-1-S9-12 Ookayama, Meguro, Tokyo 152-8552, Japan
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Ken Uchida
Depertment of Physical Electronics, Graduate School of Engineering, Tokyo Institute of Technology, 2-12-1-S9-12 Ookayama, Meguro, Tokyo 152-8552, Japan
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Takamitsu Ishihara
Advanced LSI Technology Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Toshinori Numata
Advanced LSI Technology Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Ota Kensuke
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Yokohama 235-8522, Japan
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Nakabayashi Yukio
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Masumi Saitoh
Advanced LSI Technology Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Numata Toshinori
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Numata Toshinori
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Yokohama 235-8522, Japan
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Shinichi Takagi
Depertment of Electronic Engineering, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo, Tokyo 113-0032, Japan
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Zaitsu Koichiro
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Zaitsu Koichiro
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Ota Kensuke
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Yokohama 235-8522, Japan
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Tanaka Chika
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Yokohama 235-8522, Japan
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Takamitsu Ishihara
Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Shigeki Kobayashi
Advanced LSI Technology Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Saitoh Masumi
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Yokohama 235-8522, Japan
著作論文
- Stress and Surface Orientation Engineering in Scaled CMOSFETs Considering High-Field Carrier Transport(Session 4A : Channel Engineering)
- Stress and Surface Orientation Engineering in Scaled CMOSFETs Considering High-Field Carrier Transport(Session 4A : Channel Engineering)
- Influence of High Dielectric Constant in Gate Insulator on Remote Coulomb Scattering due to Gate Impurities in Si MOS Inversion Layer
- Physical Origins of Surface Carrier Density Dependences of Interface- and Remote-Coulomb Scattering Mobility in Si MOS Inversion Layer
- Experimental Study of Uniaxial Stress Effects on Coulomb-limited Electron and Hole Mobility in Si-MOSFETs
- Low Gate-Induced Drain Leakage and Its Physical Origins in Si Nanowire Transistors
- Experimental Evaluation of Coulomb-Scattering-Limited Inversion-Layer Mobility of n-type Metal–Oxide–Semiconductor Field-Effect Transistors on Si(100), (110), and (111)-Surfaces: Impact of Correlation between Conductivity Mass and Normal Mass
- Enhanced Degradation by Negative Bias Temperature Stress in Si Nanowire Transistor
- Hall Factor in Ultrathin-Body Silicon-on-Insulator n-Type Metal–Oxide–Semiconductor Field-Effect Transistors