Toshinori Numata | Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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概要
- Numata Toshinoriの詳細を見る
- 同名の論文著者
- Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japanの論文著者
関連著者
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Nakabayashi Yukio
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Toshinori Numata
Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Numata Toshinori
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Saitoh Masumi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Ishihara Takamitsu
Advanced Lsi Technology Laboratory Corporate Research & Development Center
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Kobayashi Shigeki
Advanced Lsi Technology Laboratory Toshiba Corporation
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Ken Uchida
Department of Physical Electronics, Graduate School of Engineering, Tokyo Institute of Technology, 2-12-1-S9-12 Ookayama, Meguro, Tokyo 152-8552, Japan
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Ken Uchida
Depertment of Physical Electronics, Graduate School of Engineering, Tokyo Institute of Technology, 2-12-1-S9-12 Ookayama, Meguro, Tokyo 152-8552, Japan
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Takamitsu Ishihara
Advanced LSI Technology Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Toshinori Numata
Advanced LSI Technology Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Masumi Saitoh
Advanced LSI Technology Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Shinichi Takagi
Depertment of Electronic Engineering, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo, Tokyo 113-0032, Japan
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Takamitsu Ishihara
Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Shigeki Kobayashi
Advanced LSI Technology Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
著作論文
- Experimental Evaluation of Coulomb-Scattering-Limited Inversion-Layer Mobility of n-type Metal–Oxide–Semiconductor Field-Effect Transistors on Si(100), (110), and (111)-Surfaces: Impact of Correlation between Conductivity Mass and Normal Mass
- Hall Factor in Ultrathin-Body Silicon-on-Insulator n-Type Metal–Oxide–Semiconductor Field-Effect Transistors