Ishihara Takamitsu | Advanced Lsi Technology Laboratory Corporate Research & Development Center

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概要

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著作論文

Influence of High Dielectric Constant in Gate Insulator on Remote Coulomb Scattering due to Gate Impurities in Si MOS Inversion Layer
Physical Origins of Surface Carrier Density Dependences of Interface- and Remote-Coulomb Scattering Mobility in Si MOS Inversion Layer
Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuation in SOI MOSFETs
Quantitative Understanding of Mobility Degradation in High Effective Electric Field Region in MOSFETs with Ultra-thin Gate Oxides
Self-consistent Calculation of the Quasi-particle Energy Spectrum of Sodium using the Correlated Hartree-Fock Method
Low Gate-Induced Drain Leakage and Its Physical Origins in Si Nanowire Transistors
Study on Carrier Transport Limited by Coulomb Scattering due to Charged Centers in HfSiON MISFETs
Electron Mobility Degradation Mechanisms in HfSiON MISFETs under the Real Operating Condition
Quantitative Understanding of Electron Mobility Limited by Coulomb Scattering in Metal Oxide Semiconductor Field Effect Transistors with N2O and NO Oxynitrides
Quantitative Understanding of Electron Mobility Limited by Coulomb Scattering in MOSFETs with N_2O and NO Oxynitrides
Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness
Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness
Experimental Evaluation of Coulomb-Scattering-Limited Inversion-Layer Mobility of n-type Metal–Oxide–Semiconductor Field-Effect Transistors on Si(100), (110), and (111)-Surfaces: Impact of Correlation between Conductivity Mass and Normal Mass
Self-consistent Calculation of the Quasi-particle Energy Spectrum of Sodium using the Correlated Hartree–Fock Method
Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuations in Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors
Quantitative Examination of Mobility Lowering Associated with Ultrathin Gate Oxides in Silicon Metal-Oxide-Semiconductor Inversion Layer
Coulomb and Phonon Scattering Processes in Metal–Oxide–Semiconductor Inversion Layers: Beyond Matthiessen's Rule

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