Quantitative Understanding of Mobility Degradation in High Effective Electric Field Region in MOSFETs with Ultra-thin Gate Oxides

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概要

• 論文の詳細を見る
• 2004-09-15

著者

• Takagi S

  Process & Manufacturing Center Semiconductor Company Toshiba Corporation

• ISHIHARA Takamitsu

  Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation

• KOGA Junji

  Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation

• TAKAGI Shin-ichi

  Department of Frontier Informatics, Graduate School of Frontier Science, The University of Tokyo

• Koga J

  Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation

• Koga Junji

  Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation

• Ishihara Takamitsu

  Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation

• Ishihara Takamitsu

  Advanced Lsi Technology Laboratory Corporate Research & Development Center

• Takagi Shin-ichi

  Department Of Electrical Engineering University Of Tokyo

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