Physical Origin of Drive Current Enhancement in Ultra-thin Ge-On-Insulator (GOI) MOSFETs under Full Ballistic Transport

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概要

• 論文の詳細を見る
• 2004-09-15

著者

• TAKAGI Shin-ichi

  Department of Frontier Informatics, Graduate School of Frontier Science, The University of Tokyo

• Takagi Shin-ichi

  Department Of Electrical Engineering University Of Tokyo

関連論文

• Physical Origins of Surface Carrier Density Dependences of Interface- and Remote-Coulomb Scattering Mobility in Si MOS Inversion Layer
• Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuation in SOI MOSFETs
• Quantitative Understanding of Mobility Degradation in High Effective Electric Field Region in MOSFETs with Ultra-thin Gate Oxides
• Interface Analysis of Al_2O_3/InP Structure Prepared by Molecular Beam Deposition
• Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuations in Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors
• Physical Origin of Drive Current Enhancement in Ultra-thin Ge-On-Insulator (GOI) MOSFETs under Full Ballistic Transport

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