Takayanagi Mariko | System Lsi Research & Development Center Semiconductor Company Toshiba Corporation
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概要
- TAKAYANAGI Marikoの詳細を見る
- 同名の論文著者
- System Lsi Research & Development Center Semiconductor Company Toshiba Corporationの論文著者
関連著者
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Takayanagi Mariko
System Lsi Research & Development Center Semiconductor Company Toshiba Corporation
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Takagi Shin-ichi
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiha Corporation
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Takagi Shin-ichi
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Corporation
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Matsuzawa Kazuya
Semiconductor Technology Academic Research Center (starc)
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Matsuzawa Kazuya
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Corporation
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Matsuzawa Kazuya
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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TAKAYANAGI Mariko
System LSI Research & Development Center, Toshiba Corporation Semiconductor Company
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Ishihara Takamitsu
Advanced Lsi Technology Laboratory Corporate Research & Development Center
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Ishihara T
Hyogo Prefectural Institute Of Industrial Research
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TAKAYANAGI Mariko
Semiconductor Company, Toshiba Corporation
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TAKAYANAGI Mariko
Advanced CMOS Technology Dept., Center for Semiconductor Research & Development, Semiconductor Compa
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Takayanagi Mariko
Advanced Cmos Technology Dept. Center For Semiconductor Research & Development Semiconductor Com
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Takagi Shin-ichi
Advanced Lsi Technology Laboratory Toshiba Corporation
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Takayanagi Mariko
Semiconductor Company Toshiba Corporation
著作論文
- Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide Metal-Oxide-Semiconductor Field-Effect-Transistors with Direct Tunneling Current
- Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness
- Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness
- Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide MOSFETs with Direct Tunneling Current