Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide MOSFETs with Direct Tunneling Current
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概要
- 論文の詳細を見る
- 2001-09-25
著者
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TAKAYANAGI Mariko
System LSI Research & Development Center, Toshiba Corporation Semiconductor Company
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Takayanagi Mariko
System Lsi Research & Development Center Semiconductor Company Toshiba Corporation
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Takagi Shin-ichi
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiha Corporation
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Takagi Shin-ichi
Advanced Lsi Technology Laboratory Toshiba Corporation
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