Carrier Transport of SiN Gate Dielectrics for Dual-Gate CMOSFETs
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概要
- 論文の詳細を見る
- 2001-09-25
著者
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SHIMIZU Takashi
Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation
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Toyoshima Yoshiaki
System Lsi Research & Development Center Toshiba Corporation Semiconductor Company
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Fukui Hironobu
System Lsi Research & Development Center Toshiba Corporation Semiconductor Company
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TAKAYANAGI Mariko
System LSI Research & Development Center, Toshiba Corporation Semiconductor Company
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MORI Shinji
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
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Mori Shinji
Process & Manufacturing Engineering Center Toshiba Corporation Semiconductor Company
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Takayanagi Mariko
System Lsi Research & Development Center Toshiba Corporation Semiconductor Company
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Shimizu Takashi
Process & Manufacturing Engineering Center Toshiba Corporation Semiconductor Company
関連論文
- Influence of High Dielectric Constant in Gate Insulator on Remote Coulomb Scattering due to Gate Impurities in Si MOS Inversion Layer
- Ultrashallow Junction Formation for Sub-100nm Complementary Metal-Oxide-Semiconductor Field-Effect Transistor by Controlling Transient Enhanced Diffusion
- Formation of Ultrathin SiON Films on Si Substrates Having Different Orientations
- Carrier Transport of SiN Gate Dielectrics for Dual-Gate CMOSFETs
- Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide Metal-Oxide-Semiconductor Field-Effect-Transistors with Direct Tunneling Current
- Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide MOSFETs with Direct Tunneling Current