Advanced SOI MOSFET's with Strained-Si/SiGe Heterostructures(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)

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概要

• 論文の詳細を見る

• We have developed advanced SOI n- and p-MOSFETs with strained-Si channel on insulator (strained-SOI)structure fabricated by SIMOX(separation-by-implanted-oxygen)technology. The characteristics of this strained-SOI substrate and electrical properties of strained-SOI MOSFET's have been experimentally studied. Using strained-Si/relaxed-SiGe epitaxy technology and usual SIMOX process, we have sucessfully formed the layered structure of fully-strained-Si(20nm)/fully-relaxed-SiGe film(290nm)on uniform buried oxide layer(85nm)inside SiGe layer. Good drain current characteristics have been obtained in strained-SOI MOSFETs. It is found that both electron and hole mobility is enhanced in strained-SOI MOSFET's, compared to the universal mobility in an inversion layer and the mobility of control SOI MOSFET's. These mobility enhancement factors are almost the same as the theoretical results.

• 社団法人電子情報通信学会の論文
• 2001-10-01

著者

• Takagi S

  Mirai-national Institute Of Advanced Industrial Science And Technology (aist)

• MIZUNO Tomohisa

  Advanced LSI Technology Laboratory, Toshiba Corporation

• SUGIYAMA Naoharu

  Advanced LSI Technology Laboratory, Toshiba Corporation

• KUROBE Atsushi

  Advanced LSI Technology Laboratory, Toshiba Corporation

• TAKAGI Shin-ichi

  Advanced LSI Technology Laboratory, Toshiba Corporation

• Sugiyama N

  Mirai-association Of Super-advanced Electronics Technology (aset)

• Sugiyama N

  Research And Development Center Toshiba Corporation

• Sugiyama Naoharu

  Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation

• Takagi Shin-ichi

  Advanced Lsi Technology Laboratory Research & Development Center Toshiba Corporation

• Kurobe Atsushi

  Advanced Lsi Technology Laboratory Toshiba Corporation

• Mizuno T

  Nippon Leiz Co. Ltd. Tama‐shi Jpn

• Takagi Shin-ichi

  Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiha Corporation

• Mizuno Tomohisa

  Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan

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