Deformation Induced Holes in Ge-Rich SiGe-on-Insulator and Ge-on-Insulator Substrates Fabricated by Ge Condensation Process
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2008-10-25
著者
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Takagi S
Mirai-national Institute Of Advanced Industrial Science And Technology (aist)
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Takagi Shin-ichi
Mirai-aset
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HIRASHITA Norio
MIRAI-Association of Super-Advanced Electronics Technology (ASET)
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MORIYAMA Yoshihiko
MIRAI-Association of Super-Advanced Electronics Technology (ASET)
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NAKAHARAI Shu
MIRAI-Association of Super-Advanced Electronics Technology (ASET)
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IRISAWA Toshifumi
MIRAI-Association of Super-Advanced Electronics Technology (ASET)
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SUGIYAMA Naoharu
MIRAI-Association of Super-Advanced Electronics Technology (ASET)
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Nahakara Shu
Mirai-association Of Super-advanced Electronics Technology (aset)
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Sugiyama N
Mirai-association Of Super-advanced Electronics Technology (aset)
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Sugiyama N
Research And Development Center Toshiba Corporation
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Sugiyama Naoharu
Mirai-aset
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Sugiyama Naoharu
MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Irisawa Toshifumi
MIRAI—Association of Super-Advanced Electronics Technology (ASET), 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Takagi Shin-ichi
MIRAI Project, Association of Super-Advanced Electronics Technology, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Hirashita Norio
MIRAI—Association of Super-Advanced Electronics Technology (ASET), 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Moriyama Yoshihiko
MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Nakaharai Shu
MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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- Deformation Induced Holes in Ge-Rich SiGe-on-Insulator and Ge-on-Insulator Substrates Fabricated by Ge Condensation Process
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- Influences of Elastic and Inelastic Scatterings on Ballistic Transport in MOSFETs
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- Ion-Implanted B Concentration Profiles in Ge