Variation of Threshold Voltage in Strained Si Metal–Oxide–Semiconductor Field-Effect Transistors Induced by Non-uniform Strain Distribution in Strained-Si Channels on Silicon–Germanium-on-Insulator Substrates

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概要

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• The variation of threshold voltage in metal–oxide–semiconductor field-effect-transistors (MOSFETs) fabricated on strained Si on SiGe-on-insulator (SGOI) substrates is evaluated. A large variation of the threshold voltage is observed for MOSFETs on SGOI formed by the conventional Ge condensation method. It is experimentally revealed that the variation of threshold voltage is attributable to the variation of strain in the Si channel layers. This variation is found to be correlated with the variation of the lattice spacing in the SGOI crystal layers, which is caused by non-uniform lattice relaxation in the SGOI layers during the condensation process. It is also found that the variation of the relaxation ratio of SGOI can be significantly suppressed by the two-step oxidation and Ge condensation method.

• 2008-06-25

著者

• Takagi Shin-ichi

  Mirai-aset

• HIRASHITA Norio

  MIRAI-Association of Super-Advanced Electronics Technology (ASET)

• IRISAWA Toshifumi

  MIRAI-Association of Super-Advanced Electronics Technology (ASET)

• NUMATA Toshinori

  MIRAI(ASET)

• Sugiyama Naoharu

  MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan

• Sugiyama Naoharu

  MIRAI—Association of Super-Advanced Electronics Technology (ASET), 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan

• Irisawa Toshifumi

  MIRAI—Association of Super-Advanced Electronics Technology (ASET), 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan

• Numata Toshinori

  MIRAI—Association of Super-Advanced Electronics Technology (ASET), 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan

• Takagi Shin-ichi

  MIRAI Project, Association of Super-Advanced Electronics Technology, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan

• Takagi Shin-ichi

  MIRAI—National Institute of Advanced Industrial Science and Technology (AIST), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

• Hirashita Norio

  MIRAI—Association of Super-Advanced Electronics Technology (ASET), 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan

関連論文

• Deformation Induced Holes in Ge-Rich SiGe-on-Insulator and Ge-on-Insulator Substrates Fabricated by Ge Condensation Process
• High Mobility Fully-Depleted Germanium-on-Insulator pMOSFET with 32-nm-Thick Ge Channel Layer Formed by Ge-Condensation Technique
• Performance Enhancement under High-Temperature Operation and Physical Origin of Mobility Characteristics in Ge-rich strained SiGe-on-Insulator pMOSFETs
• Impact of Gradual Source/Drain Impurity Profiles on Performance of Germanium Channel Double-Gated pMISFETs
• High mobility Ge channel metal source/drain pMOSFETs with nickel fully silicided gate
• Ion-Implanted B Concentration Profiles in Ge
• Quantitative Evaluation of Interface Trap Density in Ge-MIS Interfaces
• Modulation of NiGe/Ge Schottky Barrier Height by Dopant and Sulfur Segregation during Ni Germanidation for Metal S/D Ge MOSFETs
• Examination of the Universality of Hole Mobility in Strained-Si p-MOSFETs
• Variation of threshold voltage in strained Si metal-oxide-semiconductor field-effect transistors induced by non-uniform strain distribution in strained-Si channels on silicon-germanium-on-insulator substrates
• Single Source Heterojunction Metal--Oxide--Semiconductor Transistors for Quasi-Ballistic Devices: Optimization of Source Heterostructures and Electron Velocity Characteristics at Low Temperature
• Variation of Threshold Voltage in Strained Si Metal–Oxide–Semiconductor Field-Effect Transistors Induced by Non-uniform Strain Distribution in Strained-Si Channels on Silicon–Germanium-on-Insulator Substrates
• Influences of Elastic and Inelastic Scatterings on Ballistic Transport in MOSFETs
• Analysis of Microstructures in SiGe Buffer Layers on Silicon-on-Insulator Substrates
• Evaluation of Dislocation Density of SiGe-on-Insulator Substrates using Enhanced Secco Etching Method
• Ion-Implanted B Concentration Profiles in Ge

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