Influences of Elastic and Inelastic Scatterings on Ballistic Transport in MOSFETs

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概要

• 論文の詳細を見る
• 2007-09-19

著者

• Takagi Shin-ichi

  Mirai-aset

• Tsuchiya Hideaki

  Kobe University Department Of Electrical And Electronics Engineering

• Takagi Shin-ichi

  Mirai-asrc

• Tsuchiya Hideaki

  Kobe University Graduate School Of Engineering

• Takagi Shin-ichi

  MIRAI Project, Association of Super-Advanced Electronics Technology, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan

関連論文

• Deformation Induced Holes in Ge-Rich SiGe-on-Insulator and Ge-on-Insulator Substrates Fabricated by Ge Condensation Process
• High Mobility Fully-Depleted Germanium-on-Insulator pMOSFET with 32-nm-Thick Ge Channel Layer Formed by Ge-Condensation Technique
• Performance Enhancement under High-Temperature Operation and Physical Origin of Mobility Characteristics in Ge-rich strained SiGe-on-Insulator pMOSFETs
• Impact of Gradual Source/Drain Impurity Profiles on Performance of Germanium Channel Double-Gated pMISFETs
• High mobility Ge channel metal source/drain pMOSFETs with nickel fully silicided gate
• Ion-Implanted B Concentration Profiles in Ge
• Quantitative Evaluation of Interface Trap Density in Ge-MIS Interfaces
• Modulation of NiGe/Ge Schottky Barrier Height by Dopant and Sulfur Segregation during Ni Germanidation for Metal S/D Ge MOSFETs
• Comparative Study on Drive Current of III-V Semiconductor, Ge and Si Channel n- mosfets based on Quantum-Corrected Monte Carlo Simulation
• A Picture of Quasi-Ballistic Transport in Nanoscale MOSFETs
• A quantum-corrected Monte Carlo study on quasi-ballistic transport in nanoscale MOSFETs
• Single Source Heterojunction Metal--Oxide--Semiconductor Transistors for Quasi-Ballistic Devices: Optimization of Source Heterostructures and Electron Velocity Characteristics at Low Temperature
• Variation of Threshold Voltage in Strained Si Metal–Oxide–Semiconductor Field-Effect Transistors Induced by Non-uniform Strain Distribution in Strained-Si Channels on Silicon–Germanium-on-Insulator Substrates
• Role of Carrier Transport in Source and Drain Electrodes of High-Mobility MOSFETs
• A First Principles Study on Electronic Band Structures of Nano-Scaled SOI Films
• Influences of Elastic and Inelastic Scatterings on Ballistic Transport in MOSFETs
• Analysis of Microstructures in SiGe Buffer Layers on Silicon-on-Insulator Substrates
• Ion-Implanted B Concentration Profiles in Ge

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