Ion-Implanted B Concentration Profiles in Ge
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概要
- 論文の詳細を見る
We evaluated the dependence of ion-implanted B concentration profiles on dose in crystalline Ge substrates (c-Ge) and evaluated B concentration profiles in amorphous Ge (a-Ge) by a Monte Carlo simulation. We showed that channeling is as significant in c-Ge as it is in crystalline Si (c-Si). We found that the concentration profiles in a-Ge and c-Ge can be fitted using a Pearson IV function and a tail function that has additional parameters for expressing the channeling tail, and we established a corresponding database, which enables us to generate ion-implanted profiles at any dose and energy up to the maximum evaluated energy of 80 keV.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-03-15
著者
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YAMASHITA Yoshimi
MIRAI-ASET
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SUZUKI Kunihiro
MIRAI-ASET
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Suzuki Kunihiro
MIRAI-ASET, Tsukuba West 7, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Takagi Shin-ichi
MIRAI-ASET, Tsukuba West 7, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Takagi Shin-ichi
MIRAI Project, Association of Super-Advanced Electronics Technology, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Ikeda Keiji
MIRAI-ASET, Tsukuba West 7, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Ikeda Keiji
MIRAI--Toshiba, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Yamashita Yoshimi
MIRAI-ASET, Tsukuba West 7, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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