Abrupt Lateral-Source Heterostructures with Relaxed/Strained Layers for Ballistic Complementary Metal Oxide Semiconductor Transistors Fabricated by Local O+ Ion-Induced Relaxation Technique of Strained Substrates

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概要

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• We have experimentally studied an abrupt lateral-relaxed/strained layer heterojunction for ballistic complementary metal oxide semiconductor (CMOS) transistors, which is fabricated by a local O+ ion-induced relaxation technique for strained semiconductors on a buried oxide layer. We have demonstrated that strained substrates in various conditions are suddenly relaxed at a critical recoil energy of O+ ions at the strained semiconductor/buried oxide layer interface. Moreover, after O+ ion implantation into strained substrates with a SiO2 mask as well as post-annealing processes, we have successfully formed lateral relaxed/strained Si layers with an abrupt strain distribution at the mask edge, according to Raman spectroscopy analysis of implanted strained substrates. In addition, strained Si layers even under the 50-nm length stripe SiO2 mask region can still keep over 60% of the strain value in strained Si layers with a large area.

• 2011-04-25

著者

• IKEDA Keiji

  MIRAI-ASET

• Horikawa Tsuyoshi

  Mirai Project Association Of Super-advanced Electronics Technology (aset)

• Horikawa Tsuyoshi

  MIRAI--NIRC, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

• Mizuno Tomohisa

  Kanagawa University, 2946 Tsuchiya, Hiratsuka, Kanagawa 259-1293, Japan

• Hasegawa Mitsuo

  Kanagawa University, 2946 Tsuchiya, Hiratsuka, Kanagawa 259-1293, Japan

• Nojiri Masashi

  AIST, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

• Ikeda Keiji

  MIRAI--Toshiba, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan

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