Mizuno Tomohisa | Kanagawa University, 2946 Tsuchiya, Hiratsuka, Kanagawa 259-1293, Japan
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概要
- Mizuno Tomohisaの詳細を見る
- 同名の論文著者
- Kanagawa University, 2946 Tsuchiya, Hiratsuka, Kanagawa 259-1293, Japanの論文著者
関連著者
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Mizuno Tomohisa
Kanagawa University, 2946 Tsuchiya, Hiratsuka, Kanagawa 259-1293, Japan
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Sameshima Toshiyuki
Tokyo A&t University
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Takehi Juria
Kanagawa University, Hiratsuka, Kanagawa 259-1293, Japan
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Takagi Shin-ichi
Mirai-aset
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MORIYAMA Yoshihiko
MIRAI-Association of Super-Advanced Electronics Technology (ASET)
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TEZUKA Tsutomu
MIRAI(ASET)
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IKEDA Keiji
MIRAI-ASET
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Horikawa Tsuyoshi
Mirai Project Association Of Super-advanced Electronics Technology (aset)
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Horikawa Tsuyoshi
MIRAI--NIRC, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Hasegawa Mitsuo
Kanagawa University, 2946 Tsuchiya, Hiratsuka, Kanagawa 259-1293, Japan
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Nojiri Masashi
AIST, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Sugiyama Naoharu
MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Sugiyama Naoharu
MIRAI--ASET, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Tezuka Tsutomu
MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Takagi Shin-ichi
MIRAI Project, Association of Super-Advanced Electronics Technology, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Takagi Shin-ichi
MIRAI--AIST, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Ikeda Keiji
MIRAI--Toshiba, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Moriyama Yoshihiko
MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Moriyama Yoshihiko
MIRAI--ASET, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Mizuno Tomohisa
Kanagawa University, Hiratsuka, Kanagawa 259-1293, Japan
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Abe Youhki
Kanagawa University, Hiratsuka, Kanagawa 259-1293, Japan
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Akamatsu Hiromu
Kanagawa University, Hiratsuka, Kanagawa 259-1293, Japan
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Betsuin Koichi
Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Tanabe Shou
Kanagawa University, Hiratsuka, Kanagawa 259-1293, Japan
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Sano Naoki
Aurea Works Corporation, Yokohama 230-0046, Japan
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Tobe Keisuke
Kanagawa University, Hiratsuka, Kanagawa 259-1293, Japan
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Maruyama Yohichi
Kanagawa University, Hiratsuka, Kanagawa 259-1293, Japan
著作論文
- Abrupt Lateral-Source Heterostructures with Relaxed/Strained Layers for Ballistic Complementary Metal Oxide Semiconductor Transistors Fabricated by Local O+ Ion-Induced Relaxation Technique of Strained Substrates
- Single Source Heterojunction Metal--Oxide--Semiconductor Transistors for Quasi-Ballistic Devices: Optimization of Source Heterostructures and Electron Velocity Characteristics at Low Temperature
- Minority Carrier Lifetime Behavior in Crystalline Silicon in Rapid Laser Heating (Special Issue : Active-Matrix Flatpanel Displays and Devices : TFT Technologies and FPD Materials)
- Postannealing Effects on Strain/Crystal Quality of Lateral Source Relaxed/Strained Layer Heterostructures Fabricated by O Ion Implantation (Special Issue : Solid State Devices and Materials (2))
- Experimental Study of Silicon Monolayers for Future Extremely Thin Silicon-on-Insulator Devices : Phonon/Band Structures Modulation Due to Quantum Confinement Effects (Special Issue : Solid State Devices and Materials (1))
- Ion Species Dependence of Relaxation Phenomena of Strained SiGe Layers Formed by Ion-Implantation-Induced Relaxation Technique