Tezuka Tsutomu | MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan

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著作論文

High Mobility Fully-Depleted Germanium-on-Insulator pMOSFET with 32-nm-Thick Ge Channel Layer Formed by Ge-Condensation Technique
Performance Enhancement under High-Temperature Operation and Physical Origin of Mobility Characteristics in Ge-rich strained SiGe-on-Insulator pMOSFETs
Hole-Mobility and Drive-Current Enhancement in Ge-Rich Strained Silicon--Germanium Wire Tri-Gate Metal--Oxide--Semiconductor Field-Effect Transistors with Nickel-Germanosilicide Metal Source and Drain
Single Source Heterojunction Metal--Oxide--Semiconductor Transistors for Quasi-Ballistic Devices: Optimization of Source Heterostructures and Electron Velocity Characteristics at Low Temperature
Analysis of Microstructures in SiGe Buffer Layers on Silicon-on-Insulator Substrates
Comprehensive Study of Electron Mobility and Band Gap in Tensile-Strained Bulk Ge
Evaluation of Dislocation Density of SiGe-on-Insulator Substrates using Enhanced Secco Etching Method
Modulation of NiGe/Ge Contact Resistance by S and P Co-introduction

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