Modulation of NiGe/Ge Contact Resistance by S and P Co-introduction

概要

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S and P co-introduced NiGe/Ge (SP-NiGe/Ge) diodes are investigated to reduce the contact resistance $R_{\text{c}}$ of NiGe/n-Ge and to increase the $R_{\text{c}}$ of NiGe/p-Ge to realize metal source/drain Ge n-channel metal--oxide--semiconductor field-effect transistors (nMOSFETs). SP-NiGe/Ge diodes show similar profiles to the mixture of S-introduced NiGe/Ge (S-NiGe/Ge) and P-introduced NiGe/Ge (P-NiGe/Ge) diodes. In SP-NiGe/Ge diodes, not P but S segregation is observed. The lowest $R_{\text{n}}/R_{\text{p}}$ value, where $R_{\text{n}}$ ($R_{\text{p}}$) is the differential resistance $R$ of NiGe/n-Ge (NiGe/p-Ge) diode, is obtained for NiGe/Ge diodes fabricated at 350 °C. It is revealed that SP-NiGe/Ge diodes can reduce the $R_{\text{n}}$ and increase the $R_{\text{p}}$ more than S-NiGe/Ge and P-NiGe/Ge diodes.
Japan Society of Applied Physicsの論文
2011-02-25