Hole-Mobility and Drive-Current Enhancement in Ge-Rich Strained Silicon--Germanium Wire Tri-Gate Metal--Oxide--Semiconductor Field-Effect Transistors with Nickel-Germanosilicide Metal Source and Drain

概要

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Highly strained SiGe-on-insulator (SGOI) tri-gate metal--oxide--semiconductor field-effect transistors (MOSFETs) with gate lengths down to 50 nm were fabricated using a two-step Ge condensation process. The MOSFETs were composed of a Ge-rich Si1-xGex wire channel ($x = 0.65$) and an ``implant-free'' NiSiGe metal source and drain. The SGOI devices exhibited 4.7 times higher hole mobility than a Si(100)/$\langle 110\rangle$ MOSFET, even at a high vertical electric field (at surface carrier concentration: $N_{\text{s}} = 1.0\times 10^{13}$ cm-2) due to the uniaxial compressive strain as high as 3.5% along the channel. Correspondingly, the current drive in the SGOI device with a gate length of 50 nm was enhanced 45% compared to that for an SOI channel device at $N_{\text{s}} = 7.2\times 10^{12}$ cm-2.
2010-12-25