IKEDA Keiji | MIRAI-ASET

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著作論文

High mobility Ge channel metal source/drain pMOSFETs with nickel fully silicided gate
Ion-Implanted B Concentration Profiles in Ge
Quantitative Evaluation of Interface Trap Density in Ge-MIS Interfaces
Modulation of NiGe/Ge Schottky Barrier Height by Dopant and Sulfur Segregation during Ni Germanidation for Metal S/D Ge MOSFETs
Abrupt Lateral-Source Heterostructures with Relaxed/Strained Layers for Ballistic Complementary Metal Oxide Semiconductor Transistors Fabricated by Local O+ Ion-Induced Relaxation Technique of Strained Substrates
Hole-Mobility and Drive-Current Enhancement in Ge-Rich Strained Silicon--Germanium Wire Tri-Gate Metal--Oxide--Semiconductor Field-Effect Transistors with Nickel-Germanosilicide Metal Source and Drain

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