YAMASHITA Yoshimi | MIRAI-ASET
スポンサーリンク
概要
関連著者
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YAMASHITA Yoshimi
MIRAI-ASET
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Takagi Shin-ichi
Mirai-aset
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Takagi Shin-ichi
MIRAI Project, Association of Super-Advanced Electronics Technology, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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SUGIYAMA Naoharu
MIRAI-Association of Super-Advanced Electronics Technology (ASET)
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TAOKA Noriyuki
MIRAI-AIST
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IKEDA Keiji
MIRAI-ASET
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Sugiyama Naoharu
Mirai-aset
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Taoka Noriyuki
Mirai-asrc
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Takagi Shin-ichi
Mirai-asrc
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Sugiyama Naoharu
MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Ikeda Keiji
MIRAI--Toshiba, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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SUZUKI Kunihiro
MIRAI-ASET
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YAMAMOTO Toyoji
MIRAI-ASET
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HARADA Masatomi
MIRAI-ASET
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Suzuki Kunihiro
MIRAI-ASET, Tsukuba West 7, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Takagi Shin-ichi
MIRAI-ASET, Tsukuba West 7, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Ikeda Keiji
MIRAI-ASET, Tsukuba West 7, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Yamashita Yoshimi
MIRAI-ASET, Tsukuba West 7, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
著作論文
- Impact of Gradual Source/Drain Impurity Profiles on Performance of Germanium Channel Double-Gated pMISFETs
- High mobility Ge channel metal source/drain pMOSFETs with nickel fully silicided gate
- Ion-Implanted B Concentration Profiles in Ge
- Quantitative Evaluation of Interface Trap Density in Ge-MIS Interfaces
- Modulation of NiGe/Ge Schottky Barrier Height by Dopant and Sulfur Segregation during Ni Germanidation for Metal S/D Ge MOSFETs
- Ion-Implanted B Concentration Profiles in Ge