Moriyama Yoshihiko | MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
スポンサーリンク
概要
- Moriyama Yoshihikoの詳細を見る
- 同名の論文著者
- MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japanの論文著者
関連著者
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MORIYAMA Yoshihiko
MIRAI-Association of Super-Advanced Electronics Technology (ASET)
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Moriyama Yoshihiko
MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Sugiyama Naoharu
MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Tezuka Tsutomu
MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Takagi Shin-ichi
Mirai-aset
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NAKAHARAI Shu
MIRAI-Association of Super-Advanced Electronics Technology (ASET)
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Takagi Shin-ichi
MIRAI Project, Association of Super-Advanced Electronics Technology, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Nakaharai Shu
MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Takagi S
Mirai-national Institute Of Advanced Industrial Science And Technology (aist)
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HIRASHITA Norio
MIRAI-Association of Super-Advanced Electronics Technology (ASET)
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SUGIYAMA Naoharu
MIRAI-Association of Super-Advanced Electronics Technology (ASET)
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TEZUKA Tsutomu
MIRAI(ASET)
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Nahakara Shu
Mirai-association Of Super-advanced Electronics Technology (aset)
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Sugiyama N
Mirai-association Of Super-advanced Electronics Technology (aset)
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Sugiyama N
Research And Development Center Toshiba Corporation
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Sugiyama Naoharu
Mirai-aset
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Hirashita Norio
MIRAI—Association of Super-Advanced Electronics Technology (ASET), 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Tezuka T
Mirai-aset
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Usuda Koji
MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Usuda Koji
Mirai-aset
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IRISAWA Toshifumi
MIRAI-Association of Super-Advanced Electronics Technology (ASET)
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TOYODA Eiji
Toshiba Ceramics
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MAEDA Tatsuro
MIRAI(AIST)
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NUMATA Toshinori
MIRAI(ASET)
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TANABE Akihito
MIRAI-ASET
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TAKAGI Sin-ichi
MIRAI Project, Association of Super-Advanced Electronics Technology (ASET)
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IKEDA Keiji
MIRAI-ASET
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Mizuno Tomohisa
Kanagawa University, 2946 Tsuchiya, Hiratsuka, Kanagawa 259-1293, Japan
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Mizuno Tomohisa
MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Sugiyama Naoharu
MIRAI--ASET, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Tezuka Tsutomu
MIRAI--Toshiba, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Oda Minoru
MIRAI--Toshiba, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Kamimuta Yuuichi
MIRAI--Toshiba, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Irisawa Toshifumi
MIRAI—Association of Super-Advanced Electronics Technology (ASET), 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Numata Toshinori
MIRAI—Association of Super-Advanced Electronics Technology (ASET), 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Takagi Shin-ichi
MIRAI--AIST, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Ikeda Keiji
MIRAI--Toshiba, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Moriyama Yoshihiko
MIRAI--ASET, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Moriyama Yoshihiko
MIRAI--Toshiba, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Takagi Sin-ichi
MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
著作論文
- Deformation Induced Holes in Ge-Rich SiGe-on-Insulator and Ge-on-Insulator Substrates Fabricated by Ge Condensation Process
- High Mobility Fully-Depleted Germanium-on-Insulator pMOSFET with 32-nm-Thick Ge Channel Layer Formed by Ge-Condensation Technique
- Performance Enhancement under High-Temperature Operation and Physical Origin of Mobility Characteristics in Ge-rich strained SiGe-on-Insulator pMOSFETs
- Hole-Mobility and Drive-Current Enhancement in Ge-Rich Strained Silicon--Germanium Wire Tri-Gate Metal--Oxide--Semiconductor Field-Effect Transistors with Nickel-Germanosilicide Metal Source and Drain
- Single Source Heterojunction Metal--Oxide--Semiconductor Transistors for Quasi-Ballistic Devices: Optimization of Source Heterostructures and Electron Velocity Characteristics at Low Temperature
- Evaluation of Dislocation Density of SiGe-on-Insulator Substrates using Enhanced Secco Etching Method