Tezuka T | Mirai-aset
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概要
関連著者
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Takagi S
Mirai-national Institute Of Advanced Industrial Science And Technology (aist)
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Sugiyama N
Mirai-association Of Super-advanced Electronics Technology (aset)
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Sugiyama N
Research And Development Center Toshiba Corporation
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Tezuka T
Mirai-aset
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Mizuno T
Nippon Leiz Co. Ltd. Tama‐shi Jpn
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MIZUNO Tomohisa
Advanced LSI Technology Laboratory, Toshiba Corporation
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SUGIYAMA Naoharu
Advanced LSI Technology Laboratory, Toshiba Corporation
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TAKAGI Shin-ichi
Advanced LSI Technology Laboratory, Toshiba Corporation
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TEZUKA Tsutomu
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
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Sugiyama Naoharu
Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation
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Takagi Shin-ichi
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Corporation
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Takagi Shin-ichi
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiha Corporation
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Tezuka Tsutomu
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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MIZUNO Tomohisa
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
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Takagi Shin-ichi
Mirai-aset
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HIRASHITA Norio
MIRAI-Association of Super-Advanced Electronics Technology (ASET)
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MORIYAMA Yoshihiko
MIRAI-Association of Super-Advanced Electronics Technology (ASET)
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NAKAHARAI Shu
MIRAI-Association of Super-Advanced Electronics Technology (ASET)
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SUGIYAMA Naoharu
MIRAI-Association of Super-Advanced Electronics Technology (ASET)
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TEZUKA Tsutomu
MIRAI(ASET)
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SUZUKI Masamichi
Environmental Engineering & Analysis Center, Corporate R&D Center, Toshiba Corporation
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Nahakara Shu
Mirai-association Of Super-advanced Electronics Technology (aset)
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Sugiyama Naoharu
Mirai-aset
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Suzuki Masamichi
Environmental Engineering And Analysis Center Corporate Research & Development Center Toshiba Co
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Mizuno Tomohisa
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Sugiyama Naoharu
MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Tezuka Tsutomu
MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Takagi Shin-ichi
MIRAI Project, Association of Super-Advanced Electronics Technology, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Hirashita Norio
MIRAI—Association of Super-Advanced Electronics Technology (ASET), 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Moriyama Yoshihiko
MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Nakaharai Shu
MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Usuda Koji
Mirai-aset
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TOYODA Eiji
Toshiba Ceramics
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MAEDA Tatsuro
MIRAI(AIST)
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NUMATA Toshinori
MIRAI(ASET)
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TANABE Akihito
MIRAI-ASET
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KUROBE Atsushi
Advanced LSI Technology Laboratory, Toshiba Corporation
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TAKAGI Shin-ichi
The authors are with Advanced LSI Technology Laboratory, Corporate Research & Development Center, To
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MIZUNO Tomohisa
The authors are with Advanced LSI Technology Laboratory, Corporate Research & Development Center, To
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SUGIYAMA Naoharu
The authors are with Advanced LSI Technology Laboratory, Corporate Research & Development Center, To
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TEZUKA Tsutomu
The authors are with Advanced LSI Technology Laboratory, Corporate Research & Development Center, To
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KUROBE Atsushi
The authors are with Advanced LSI Technology Laboratory, Corporate Research & Development Center, To
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Kurobe Atsushi
Advanced Lsi Technology Laboratory Toshiba Corporation
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Numata Toshinori
MIRAI—Association of Super-Advanced Electronics Technology (ASET), 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Usuda Koji
MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
著作論文
- High Mobility Fully-Depleted Germanium-on-Insulator pMOSFET with 32-nm-Thick Ge Channel Layer Formed by Ge-Condensation Technique
- Performance Enhancement under High-Temperature Operation and Physical Origin of Mobility Characteristics in Ge-rich strained SiGe-on-Insulator pMOSFETs
- Novel Fabrication Technique for Relaxed SiGe-on-Insulator Substrates without Thick SiGe Buffer Structures
- Strained-Si-on-Insulator (Strained-SOI) MOSFETs-Concept, Structures and Device Characteristics
- A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100nm Strained Silicon-on-Insulator MOSFETs
- A Novel Fabrication Technique of Ultra-Thin and Relaxed SiGe Buffer Layers with High Ge Content for Sub-100nm Strained Silicon-on-Insulator MOSFETs