TEZUKA Tsutomu | Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
スポンサーリンク
概要
関連著者
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Takagi S
Mirai-national Institute Of Advanced Industrial Science And Technology (aist)
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MIZUNO Tomohisa
Advanced LSI Technology Laboratory, Toshiba Corporation
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SUGIYAMA Naoharu
Advanced LSI Technology Laboratory, Toshiba Corporation
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TAKAGI Shin-ichi
Advanced LSI Technology Laboratory, Toshiba Corporation
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TEZUKA Tsutomu
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
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Sugiyama N
Mirai-association Of Super-advanced Electronics Technology (aset)
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Sugiyama N
Research And Development Center Toshiba Corporation
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Sugiyama Naoharu
Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation
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Takagi Shin-ichi
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Corporation
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Tezuka T
Mirai-aset
著作論文
- Novel Fabrication Technique for Relaxed SiGe-on-Insulator Substrates without Thick SiGe Buffer Structures
- A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100nm Strained Silicon-on-Insulator MOSFETs
- A Novel Fabrication Technique of Ultra-Thin and Relaxed SiGe Buffer Layers with High Ge Content for Sub-100nm Strained Silicon-on-Insulator MOSFETs