Single Source Heterojunction Metal--Oxide--Semiconductor Transistors for Quasi-Ballistic Devices: Optimization of Source Heterostructures and Electron Velocity Characteristics at Low Temperature

概要

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We have experimentally studied the electron velocity behavior of single source heterojunction metal--oxide--semiconductor field-effect transistor (SHOTs) without a drain energy spike fabricated by optimizing the source heterostructures. The electron velocity $v_{\text{E}}$ of SHOTs with source conduction band offset $\Delta E_{\text{C}}$ strongly depends on the source heterojunction position, and the enhancement of $v_{\text{E}}$ for SHOTs relative to that for single drain-heterojunction transistors (DHOTs) and strained-Si-on-insulator devices (SSOIs) slightly increases with decreasing lattice temperature $T$. We have also found that $v_{\text{E}}$ for SHOTs, DHOTs, and SSOIs has a power law dependence on low-field electron mobility $\mu_{\text{EFF}}$, that is, the mean free path of electrons $\lambda$ at various $T$. Thus, the electron kinetic energy $\Delta E_{\text{K}}$ converted by the source band offset in SHOTs increases with increasing mean free path of electrons at lower $T$. Using $v_{\text{E}}\propto\lambda^{\alpha}$ ($\alpha$: constant), we can also estimate $v_{\text{E}}$ for both SHOTs and DHOTs at the ballistic transport limit.
2011-01-25