Postannealing Effects on Strain/Crystal Quality of Lateral Source Relaxed/Strained Layer Heterostructures Fabricated by O Ion Implantation (Special Issue : Solid State Devices and Materials (2))

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Mizuno Tomohisa

  Kanagawa University, 2946 Tsuchiya, Hiratsuka, Kanagawa 259-1293, Japan

• Takehi Juria

  Kanagawa University, Hiratsuka, Kanagawa 259-1293, Japan

• Tanabe Shou

  Kanagawa University, Hiratsuka, Kanagawa 259-1293, Japan

関連論文

• Abrupt Lateral-Source Heterostructures with Relaxed/Strained Layers for Ballistic Complementary Metal Oxide Semiconductor Transistors Fabricated by Local O+ Ion-Induced Relaxation Technique of Strained Substrates
• Single Source Heterojunction Metal--Oxide--Semiconductor Transistors for Quasi-Ballistic Devices: Optimization of Source Heterostructures and Electron Velocity Characteristics at Low Temperature
• Minority Carrier Lifetime Behavior in Crystalline Silicon in Rapid Laser Heating (Special Issue : Active-Matrix Flatpanel Displays and Devices : TFT Technologies and FPD Materials)
• Postannealing Effects on Strain/Crystal Quality of Lateral Source Relaxed/Strained Layer Heterostructures Fabricated by O Ion Implantation (Special Issue : Solid State Devices and Materials (2))
• Experimental Study of Silicon Monolayers for Future Extremely Thin Silicon-on-Insulator Devices : Phonon/Band Structures Modulation Due to Quantum Confinement Effects (Special Issue : Solid State Devices and Materials (1))
• Ion Species Dependence of Relaxation Phenomena of Strained SiGe Layers Formed by Ion-Implantation-Induced Relaxation Technique

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