Minority Carrier Lifetime Behavior in Crystalline Silicon in Rapid Laser Heating (Special Issue : Active-Matrix Flatpanel Displays and Devices : TFT Technologies and FPD Materials)

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概要

• 論文の詳細を見る

著者

• Sameshima Toshiyuki

  Tokyo A&t University

• Mizuno Tomohisa

  Kanagawa University, 2946 Tsuchiya, Hiratsuka, Kanagawa 259-1293, Japan

• Betsuin Koichi

  Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan

• Sano Naoki

  Aurea Works Corporation, Yokohama 230-0046, Japan

関連論文

• Improvement of SiO_2 Properties and Silicon Surface Passivation by Heat Treatment with High-Pressure H_2O Vapor
• High pressure water vapor annealing for improving HfSiO dielectrics properties
• Crystalline Properties of Laser Crystallized Silicon Films
• The Gas Combustion of H_2 with N_2O Used for Rapid Thermal Annealing
• Application of Rapid Joule Heating Method to Fabrication of Polycrystalline Silicon Thin Film Transistors
• Rapid Joule Heating of Metal Films Used to Fabricate Polycrystalline Silicon Thin Film Transistors : Semiconductors
• Improving High-κ Gate Dielectric Properties by High-Pressure Water Vapor Annealing
• Improvement in Characteristics of Polycrystalline Silicon Thin-Film Transistors by Heating with High-Pressure H_2O Vapor
• Heat Theatment of Amorphous and Polycrystalline Silicon Thin Films with High-Pressure H_2O Vapor
• Heat Treatment of Amorphous and Polycrystalline Silicon Thin Films with H_20 Vapor
• Heat Treatment with High-Pressure H_2O Vapor of Pulsed Laser Crystallized Silicon Films
• Electrical Properties of Excimer-Laser-Crystallized Lightly Doped Polycrystalline Silicon Films
• High-Pressure H_2O Vapor Heat Treatment Used to Fabricate Poly-Si Thin Film Transistors : Semiconductors
• Characterization of Plasma-Irradiated SiO2/Si Interface Properties by Photoinduced-Carrier Microwave Absorption Method
• Infrared Semiconductor Laser Crystallization of Silicon Thin Films Using Diamond-Like Carbon as Photoabsorption Layer
• Abrupt Lateral-Source Heterostructures with Relaxed/Strained Layers for Ballistic Complementary Metal Oxide Semiconductor Transistors Fabricated by Local O+ Ion-Induced Relaxation Technique of Strained Substrates
• Minority Carrier Lifetime Measurements by Photoinduced Carrier Microwave Absorption Method
• Crystalline Silicon Solar Cells with Two Different Metals
• Defect Reduction in Polycrystalline Silicon Thin Films at 150 °C
• Single Source Heterojunction Metal--Oxide--Semiconductor Transistors for Quasi-Ballistic Devices: Optimization of Source Heterostructures and Electron Velocity Characteristics at Low Temperature
• Electrical Properties of Pulsed Laser Crystallized Silicon Films
• Activation Behavior of Boron and Phosphorus Atoms Implanted in Polycrystalline Silicon Films by Heat Treatment at 250°C
• Improvement of Electrical Properties of Pulsed Laser Crystallized Silicon Films by Oxygen Plasma Treatment
• Improvement of Si0_2 Properties by Heating Treatment in High Pressure H_20 Vapor
• Crystalline Grain Growth in the Lateral Direction for Silicon Thin Films by Electrical Current-Induced Joule Heating
• Measurements of Temperature Distribution in Polycrystalline Thin Film Transistors Caused by Self-Heating
• Current-Induced Joule Heating Used to Crystallize Silicon Thin Films
• Defect Reduction in Polycrystalline Silicon Thin Films by Heat Treatment with High-Pressure H2O Vapor
• Minority Carrier Lifetime Behavior in Crystalline Silicon in Rapid Laser Heating (Special Issue : Active-Matrix Flatpanel Displays and Devices : TFT Technologies and FPD Materials)
• Passivation of SiO_2/Si Interfaces Using High-Pressure-H_2O-Vapor Heating
• Activation of Implanted Boron Atoms in Silicon Wafers by Infrared Semiconductor Laser Annealing Using Carbon Films as Optical Absorption Layers
• Postannealing Effects on Strain/Crystal Quality of Lateral Source Relaxed/Strained Layer Heterostructures Fabricated by O Ion Implantation (Special Issue : Solid State Devices and Materials (2))
• Experimental Study of Silicon Monolayers for Future Extremely Thin Silicon-on-Insulator Devices : Phonon/Band Structures Modulation Due to Quantum Confinement Effects (Special Issue : Solid State Devices and Materials (1))
• Surface Passivation of Crystalline Silicon by Combination of Amorphous Silicon Deposition with High-Pressure H2O Vapor Heat Treatment
• Investigation of Silicon Surface Passivation by Microwave Annealing Using Multiple-Wavelength Light-Induced Carrier Lifetime Measurement
• Improvement in SiO2 Film Properties Formed by Sputtering Method at 150 °C
• Multi Junction Solar Cells Stacked with Transparent and Conductive Adhesive
• Activation of Silicon Implanted with Phosphorus Atoms by Infrared Semiconductor Laser Annealing
• Heating Layer of Diamond-Like Carbon Films Used for Crystallization of Silicon Films
• Characterization of Polycrystalline Silicon Thin-Film Transistors
• Recrystallization Behavior of Silicon Implanted with Phosphorus Atoms by Infrared Semiconductor Laser Annealing
• Analysis of Microwave Absorption Caused by Free Carriers in Silicon
• Activation of Silicon Implanted with Phosphorus and Boron Atoms by Infrared Semiconductor Laser Rapid Annealing
• Improvement of Reliability in Low-Temperature Polycrystalline Silicon Thin-Film Transistors by Water Vapor Annealing
• Pulsed Laser Annealing of Thin Silicon Films
• Minority Carrier Annihilation in Lateral Direction Caused by Recombination Defects at Cut Edges and Bear Surfaces of Crystalline Silicon
• Ion Species Dependence of Relaxation Phenomena of Strained SiGe Layers Formed by Ion-Implantation-Induced Relaxation Technique
• Forward Transfer of Thin-Film Devices to Flexible Substrates by Applying Thermal Stress
• Germanium Oxide Layers Used for Forward Transfer of Electrical Circuits to Foreign Plastic Substrates
• Multi junction solar cells using band-gap induced cascaded light absorption

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