Activation of Implanted Boron Atoms in Silicon Wafers by Infrared Semiconductor Laser Annealing Using Carbon Films as Optical Absorption Layers

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概要

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• We report continuous wave (CW) IR semiconductor laser annealing for the activation of boron atoms implanted into an n-type Si wafer with diamond-like carbon (DLC) films as optical absorption layers. Boron atoms were implanted at 10 keV at doses of $5\times 10^{14}$, $1\times 10^{15}$, and $1.5\times 10^{15}$ cm-2. The depth at the boron concentration of $10^{18}$ cm-2 was 50 nm. Samples were annealed by irradiation at 66.5–80.5 kW/cm2 and 2.6 ms. The sheet resistance of the sample markedly decreased to 531 $\Omega$/sq for implantation at $1.5\times 10^{15}$ cm-2 by laser annealing. Boron atoms were almost completely activated at a carrier density near the boron concentration for implantation at 10 keV. The largest diffusion length of boron atoms was 3 nm.

• 2007-07-25

著者

• Sano Naoki

  Hightec Systems Corporation

• Sameshima Toshiyuki

  Tokyo A&t University

• Andoh Nobuyuki

  Tokyo Univ. Agriculture And Technol. Tokyo Jpn

• Andoh Yasunori

  Nissin Ion Equipment Co., Ltd., Koka, Shiga 528-0068, Japan

• Andoh Nobuyuki

  Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan

• Andoh Yasunori

  NISSIN Electric Co., Ltd., Kyoto 615-8686, Japan

• Matsuda Yasuhiro

  Nissin Ion Equipment Co., Ltd., Koka, Shiga 528-0068, Japan

• Sameshima Toshiyuki

  Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan

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