Minority Carrier Lifetime Measurements by Photoinduced Carrier Microwave Absorption Method

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概要

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• We propose a measurement system for photoinduced minority carrier absorption of 9.35 GHz microwaves using periodically pulsed light illumination at 620 nm. The ratio of average carrier density when light illumination is ON to that when light illumination is OFF, $P$, was theoretically analyzed for different light pulse widths. The analysis of $P$ resulted in a formula giving the minority carrier lifetime $\tau_{\text{eff}}$ of silicon under continuous light illumination. $\tau_{\text{eff}}$ for holes was experimentally determined using the formula, and its spatial distribution was obtained to be from $1.0 \times 10^{-3}$ to $1.28 \times 10^{-3}$ s for n-type silicon substrates with a thickness of 520 μm coated with 100-nm-thick thermally grown SiO2 layers. We also demonstrated that $\tau_{\text{eff}}$ depended on the means of light illumination for a defective sample. Two different $\tau_{\text{eff}}$ values were obtained, $7 \times 10^{-5}$ and $1.73 \times 10^{-4}$ s, in the cases of light illumination to the top surface and rear surface, respectively, when the SiO2 layer was etched up to 2 nm at the top surface.

• 2011-03-25

著者

• Sameshima Toshiyuki

  Tokyo A&t University

• Nagao Tomokazu

  Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo 184-8588, Japan

• Hasumi Masahiko

  Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan

• Kogure Kazuya

  Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan

• Kogure Kazuya

  Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan

• Yoshidomi Shinya

  Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan

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