Investigation of Silicon Surface Passivation by Microwave Annealing Using Multiple-Wavelength Light-Induced Carrier Lifetime Measurement
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概要
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A simple annealing method using a commercial 2.45 GHz microwave oven is reported to increase the minority carrier lifetime \tau_{\text{eff}} for 4-in.-size 500-μm-thick 20 \Omega cm n-type silicon substrates coated with 100-nm-thermally grown SiO2 layers. The microwave annealing was conducted with 2-mm-thick glass substrates, which sandwiched a silicon sample to maintain the thermal energy in silicon and realize gradual cooling. A 9.35 GHz microwave transmittance measurement system was used to measure \tau_{\text{eff}} in the cases of continuous-wave 635 and 980 nm laser diode (LD) light illuminations. Radio-frequency Ar plasma irradiation at 50 W for 60 s to the top surface of a silicon sample markedly decreased \tau_{\text{eff}} in the range from 6.0\times 10^{-6} to 2.4\times 10^{-5} s and from 4.2\times 10^{-5} to 6.4\times 10^{-5} s in the cases of 635 and 980 nm light illuminations, respectively, while \tau_{\text{eff}} had the same distribution from 1.6\times 10^{-3} to 3.1\times 10^{-3} s for the initial samples. The finite element numerical analysis revealed that Ar plasma irradiation caused high densities of recombination defect states at the silicon top surface in the range from 1.3\times 10^{13} to 5.0\times 10^{13} cm-2. Microwave annealing at 700 W for 120 s markedly increased \tau_{\text{eff}} in the range from 8.0\times 10^{-4} to 2.5\times 10^{-3} s, which were close to those of the initial samples. The density of recombination defect states was well decreased by microwave annealing to low values in the range from 7.0\times 10^{10} to 3.4\times 10^{11} cm-2. The high \tau_{\text{eff}} achieved by microwave annealing was maintained for a long time above 5000 h.
- 2013-01-25
著者
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Sameshima Toshiyuki
Tokyo A&t University
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Hasumi Masahiko
Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Hasumi Masahiko
Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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Ebina Ryoko
Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Betsuin Koichi
Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Takiguchi Yuta
Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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