Current-Induced Joule Heating Used to Crystallize Silicon Thin Films
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概要
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Electrical-current-induced joule heating was applied to the crystallization of 60-nm-thick amorphous silicon films formed on glass substrates. Three-μs-pulsed voltages were applied to silicon films connected with a capacitance in parallel. Coincident irradiation with a 28-ns-pulsed excimer laser melted films partially and reduced their resistance. Complete melting for 12μs and a low cooling rate of 1.1×10^8 K/s were achieved by joule heating from electrical energy that accumulated at a capacitance of 0.22μF. The analysis of electrical conductivity suggested a density of defect states of 1.5×10^<12> cm^<-2> at grain boundaries. The formation of 3.5-μm-long crystalline grains was observed using a transmission electron microscope. The preferential crystalline orientation was(110).
- 社団法人応用物理学会の論文
- 2000-07-01
著者
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Sameshima Toshiyuki
Tokyo A&t University
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OZAKI Kentaro
Tokyo University of Agriculture and Technology
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