Characterization of Plasma-Irradiated SiO2/Si Interface Properties by Photoinduced-Carrier Microwave Absorption Method

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概要

• 論文の詳細を見る

• We report photoinduced carrier recombination induced by 13.56 MHz radio frequency argon plasma treatment for samples of silicon substrates coated with thermally grown SiO2 layers. The transmissivity of a 9.35 GHz microwave was measured and analyzed under illumination of 532 nm green light to the top or rear surface. Irradiation of argon plasma at 100 W for 5 min caused substantial carrier recombination. The recombination velocity of the plasma-irradiated surface was estimated to be 6000 cm/s. Investigation of 100 kHz capacitance response characteristics as a function of bias voltage for metal oxide p-type silicon structures revealed that irradiation of argon plasma increased the fixed charge density from $3.2\times 10^{11}$ to $3.0\times 10^{12}$ cm-2. Those changes were restored completely by heat treatment at 300 °C in air for 60 min.

• 2011-03-25

著者

• Sameshima Toshiyuki

  Tokyo A&t University

• Nagao Tomokazu

  Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo 184-8588, Japan

• Hasumi Masahiko

  Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan

• Takenezawa Jun

  Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo 184-8588, Japan

• Hasumi Masahiko

  Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo 184-8588, Japan

• Hasumi Masahiko

  Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan

• Sameshima Toshiyuki

  Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo 184-8588, Japan

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