Improvement of Si0_2 Properties by Heating Treatment in High Pressure H_20 Vapor
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Properties of SiO_2 and SiO_2 /Si interfaces formed by plasma chemical vapor deposition were improved by heatingat 27O℃ in high pressure H_20 vapor. The treatment reduced the fixed oxide charge density from 2.5 × 10^12 cm^-2(initial) to 8 × 10^10 cm^-2 as the H_20 vapor pressure increased to 54 bar. The peak frequency of the abscorption band caused by the Si-O antisymmetric stretching vibration mode was increased to 1078 cm^-1 for treatment with 54 bar H_20 vapor, while it was 1062 cm^-1 before the treatment. The full width at half-maximum of the absorption band was reduced to 65 cm^-1
- 社団法人応用物理学会の論文
- 1997-06-01
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