Heating Layer of Diamond-Like Carbon Films Used for Crystallization of Silicon Films
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概要
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Rapid thermal crystallization of silicon films with a heating layer of diamond-like carbon (DLC) films is reported. DLC films 200 nm thick have an optical absorbance higher that 0.7 for wavelengths shorter than 1000 nm. They are also heat resistant to about 5000 K. A crystalline volume ratio of 0.85 is achieved for silicon films through heat diffusion from DLC heated by 30-ns-pulsed XeCl excimer laser irradiation at 200 mJ/cm2 for 100 nm DLC/5 nm SiO2/25 nm Si/quartz, while it is only 0.4 for 25 nm Si/quartz because of high reflection loss. Crystallization of silicon films is also achieved by 1064 nm YAG laser heating of the 200 nm DLC layer overlying the silicon films.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-10-15
著者
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Sameshima Toshiyuki
Tokyo A&t University
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Andoh Nobuyuki
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
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Andoh Nobuyuki
Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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Sameshima Toshiyuki
Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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