Ion Species Dependence of Relaxation Phenomena of Strained SiGe Layers Formed by Ion-Implantation-Induced Relaxation Technique

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概要

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• We have experimentally studied a new H⁺-ion-induced relaxation technique for compressive-strained SiGe layers on a buried oxide layer (BOX) for high-performance p-channel source heterojunction devices, to improve the crystalline quality of the ion-implanted SiGe layers, using the very steep recoil energy E_{\text{R}} distribution of H⁺ions. In addition, we have compared the H⁺-ion-induced relaxation phenomena of the strained SiGe with the O⁺-ion-induced one. We have experimentally shown that the strained SiGe layers can also be fully relaxed even by H⁺ion implantation, using Raman spectroscopy analysis. In addition, the obtained Raman spectroscopy data show that the crystalline quality of H⁺-ion-implanted SiGe layers can be improved and is much more uniform, compared with that of the O⁺-ion-implanted area, as expected. However, high-dose H⁺ion implantation locally causes the splitting of strained SiGe layers from the BOX layer, which is the technical limitation of H⁺ions.

• 2013-04-25

著者

• Mizuno Tomohisa

  Kanagawa University, 2946 Tsuchiya, Hiratsuka, Kanagawa 259-1293, Japan

• Mizuno Tomohisa

  Kanagawa University, Hiratsuka, Kanagawa 259-1293, Japan

• Takehi Juria

  Kanagawa University, Hiratsuka, Kanagawa 259-1293, Japan

• Abe Youhki

  Kanagawa University, Hiratsuka, Kanagawa 259-1293, Japan

• Akamatsu Hiromu

  Kanagawa University, Hiratsuka, Kanagawa 259-1293, Japan

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• Ion Species Dependence of Relaxation Phenomena of Strained SiGe Layers Formed by Ion-Implantation-Induced Relaxation Technique

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