Takehi Juria | Kanagawa University, Hiratsuka, Kanagawa 259-1293, Japan
スポンサーリンク
概要
関連著者
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Mizuno Tomohisa
Kanagawa University, 2946 Tsuchiya, Hiratsuka, Kanagawa 259-1293, Japan
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Takehi Juria
Kanagawa University, Hiratsuka, Kanagawa 259-1293, Japan
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Mizuno Tomohisa
Kanagawa University, Hiratsuka, Kanagawa 259-1293, Japan
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Abe Youhki
Kanagawa University, Hiratsuka, Kanagawa 259-1293, Japan
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Akamatsu Hiromu
Kanagawa University, Hiratsuka, Kanagawa 259-1293, Japan
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Tanabe Shou
Kanagawa University, Hiratsuka, Kanagawa 259-1293, Japan
著作論文
- Postannealing Effects on Strain/Crystal Quality of Lateral Source Relaxed/Strained Layer Heterostructures Fabricated by O Ion Implantation (Special Issue : Solid State Devices and Materials (2))
- Ion Species Dependence of Relaxation Phenomena of Strained SiGe Layers Formed by Ion-Implantation-Induced Relaxation Technique