Analysis of Microstructures in SiGe Buffer Layers on Silicon-on-Insulator Substrates
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概要
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Microstructures in strain-relaxed SiGe buffer layers grown on silicon-on-insulator (SOI) substrates have been analyzed. The growth of strain-relaxed SiGe layers was achieved by two methods, a Ge-condensation method and a strain-relaxation method using a pure-edge dislocation network. We measured the surface morphology, dislocation structure, and crystalline mosaicity of the strain-relaxed SiGe layers and investigated the influence of various growth parameters. Transmission electron microscopy revealed residual strain-undulation elongating approximately along two orthogonal in-plane $ \langle 110 \rangle $ directions in a strain-relaxed SiGe layer formed by the Ge-condensation method. On the other hand, the morphology of pure-edge dislocations buried at the SiGe/SOI interface was dependent on the sample structure as well as the annealing process, both of which critically determine dislocation propagation in the SiGe layer. A clear correlation was obtained between the dislocation morphology in the SiGe layer and the crystalline mosaicity measured by X-ray diffraction analysis.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-10-15
著者
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NAKATSUKA Osamu
EcoTopia Science Institute, Nagoya University
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OGAWA Masaki
Center for Cooperative Research in Advanced Science & Technology, Nagoya University
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Zaima Shigeaki
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Takagi Shin-ichi
Mirai-aset
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TEZUKA Tsutomu
MIRAI(ASET)
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Sakai Akira
Department Of Agricultural Chemistry The University Of Tokyo
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Taoka Noriyuki
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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Sugiyama Naoharu
MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Sugiyama Naoharu
MIRAI Project, Association of Super-Advanced Electronics Technology, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Mochizuki Shogo
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Nakatsuka Osamu
EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Tezuka Tsutomu
MIRAI Project, Association of Super-Advanced Electronics Technology, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Tezuka Tsutomu
MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Takagi Shin-ichi
MIRAI Project, Association of Super-Advanced Electronics Technology, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Taoka Noriyuki
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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