Role of Carrier Transport in Source and Drain Electrodes of High-Mobility MOSFETs

スポンサーリンク

概要

• 論文の詳細を見る
• Institute of Electrical and Electronics Engineers (IEEE)の論文

著者

• Tsuchiya Hideaki

  Kobe University Department Of Electrical And Electronics Engineering

• Mori Takashi

  Kobe University Department Of Electrical And Electronics Engineering

関連論文

• Comparative Study on Drive Current of III-V Semiconductor, Ge and Si Channel n- mosfets based on Quantum-Corrected Monte Carlo Simulation
• A Picture of Quasi-Ballistic Transport in Nanoscale MOSFETs
• A quantum-corrected Monte Carlo study on quasi-ballistic transport in nanoscale MOSFETs
• Role of Carrier Transport in Source and Drain Electrodes of High-Mobility MOSFETs
• A First Principles Study on Electronic Band Structures of Nano-Scaled SOI Films
• Influences of Elastic and Inelastic Scatterings on Ballistic Transport in MOSFETs

スポンサーリンク