Satake Hideki | Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

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概要

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著作論文

A Guideline for Accurate Two-Frequency Capacitance Measurement for Ultra-Thin Gate Oxides
Impact of Captured-Carrier Distribution on Recovery Characteristics of Positive- and Negative-Bias Temperature Instability in HfSiON/SiO_2 Gate Stack
Enhancement of Dielectric Constant due to Expansion of Lattice Spacing in CeO_2 Directly Grown on Si(111)
Deuterium Effect on Both Interface-State Generation and Stress-Induced-Leakage-Current under Fowler-Nordheim Electron Injection
A Study of the Effect of Deuterium on Stress-Induced Leakage Current
Time Evolution of Mean and Dispersion in Si/SiO_2 Interface States Generation Statistics
Study on Zr-Silicate Interfacial Layer of ZrO_2-MIS Structure Fabricated by Pulsed Laser Ablation Deposition Method
Impact of TDDB Distribution Function on Lifetime Estimation in Ultra-Thin Gate Oxides
The Relation between Dielectric Constant and Film Composition of Ultra-Thin Silicon Oxynitride Films : Experimental Evaluation and Analysis of Nonlinearity
Extraction of Interface State Density in Ultra-Thin Gate Dielectrics : A Composition Method of Ideal CV Curves in High-Frequency CV Analysis
Reliability Concern of Ultra-Thin Gate Oxides
Suppression of Stress-Induced Leakage Current of Wet and Dry SiO2 by SiD4 Poly-Si Gate Electrode
Reconsideration of Hydrogen Release at Ultra Thin Gate Oxide Interface

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