Nishikawa Yukie | Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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概要
- NISHIKAWA Yukieの詳細を見る
- 同名の論文著者
- Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporationの論文著者
関連著者
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Nishikawa Yukie
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Nakata Y
Fujitsu Ltd. Atsugi Jpn
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Nishikawa Y
Materials And Devices Research Laboratories Toshiba Corporation
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Nishikawa Y
Toshiba Corp. Kawasaki Jpn
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Nishikawa Yukie
Corporate Research & Development Center Toshiba Corporation
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NAKATA Yoshiaki
Fujitsu Laboratories Ltd.
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Nakata Yoshiaki
Fujitsu Laboratories Limited
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YOKOYAMA Naoki
Fujitsu Laboratories Ltd.
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Yokoyama Naoki
Department of Pediatrics, Kobe University Graduate School of Medicine
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Yokoyama N
Fujitsu Laboratories Ltd.
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Yokoyama Naoki
Institute For Nano Quantum Information Electronics The University Of Tokyo
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Nakata Y
Fujitsu Laboratories Ltd.
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Muto Shigeki
Department Of Physics School Of Science Tokai University
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武藤 真三
山梨大学
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Muto S
Kek Ibaraki
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武藤 真三
山梨大学工学部
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MUTO Shunichi
Department of Applied Physics, Hokkaido University
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Muto Shinzo
Department Of Electrical Engineering And Computer Science Faculty Of Engineering Yamanashi Universit
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武藤 俊介
名古屋大学
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Muto Shunichi
Department of Applied Physics, Hokkaido Univercity, Sapporo 060-8628, Japan
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Sugawara Mitsuru
北海道大学 薬学研究臨床薬剤学
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Sugawara M
Fujitsu Laboratories Ltd.
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Nakata Yoshinori
Microgravity Materials Science Group Institute For Materials And Chemical Process National Institute
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Sugawara M
Semiconductor Company Sony Corporation
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Sugawara M
Fujitsu Limited And Fujitsu Laboratories Limited
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Matsushita Daisuke
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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FUTATSUGI Toshiro
Fujitsu Laboratories Ltd.
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Sugawara Mitsuru
Fujitsu Limited And Fujitsu Laboratories Limited
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SUGIYAMA Yoshihiro
Fujitsu Limited
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Sugiyama Y
Fujitsu Laboratories Ltd.
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Sugawara Mitsuru
Fujitsu Laboratories Ltd.
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Segawa Yusaburo
Photodynamics Research Center Riken (institute Of Physical And Chemical Research)
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Sugiyama Yoshinobu
Fujitsu Laboratories Ltd.
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Futatsugi T
Fujitsu Laboratories Ltd.
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Sugiyama Yoshihiro
Fujitsu Laboratories Ltd.
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Sugawara Mitsuru
Fujitsu and Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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HAGA Tetsuya
Department of Applied Physics, Hokkaido University
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MUKAI Kohki
Optical Semiconductor Devices Labs, Fujitsu Laboratories Ltd.
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HORIGUCHI Naoto
Fujitsu Laboratories Ltd.
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Haga T
Ntt Telecommunications Energy Lab. Kanagawa Jpn
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Mukai K
Univ. Tokyo Chiba Jpn
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FUKUSHIMA Noburu
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
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YAMAGUCHI Takeshi
Advanced LSI Technology Laboratory, Toshiba Corporation
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SATOU Nobutaka
Toshiba Nanoanalysis Corporation
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Horiguchi N
Fujitsu Laboratories Ltd.
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Yamaguchi Takeshi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Ishikawa H
Fukuyama Univ. Hiroshima Jpn
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Fukushima Noburu
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Fukushima N
Corporate Research & Development Center Toshiba Corporation
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Matsushita Daisuke
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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AWANO Yuji
Fujitsu Ltd.
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MATSUMURA Naoki
Department of Applied Physics, Hokkaido University
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ISHIKAWA Hiroshi
Fujitsu Laboratories Ltd.
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MUKAI Kohki
Fujitsu Laboratories Ltd.
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MANKAD Tanaya
Materials Department, University of California
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PETROFF Pierre
Materials Department, University of California
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Shiramine Ken-ichi
Department Of Applied Physics Hokkaido University
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Yasuda N
Tokyo Inst. Technol. Tokyo
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Petroff P
Univ. California California Usa
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Petroff Pierre
Materiais And Electrical And Computer Engineering University Of Callfornia
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Petroff Pierre
Materials Department University Of California Santa Barbara
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Awano Yuji
Fujitsu Lab. Ltd. Kanagawa Jpn
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Awano Y
Fujitsu Ltd. Atsugi Jpn
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Awano Yuji
Fujitsu Laboratories Ltd.
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Mankad Tanaya
Materials Department University Of California
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Yasuda Naoki
Corporate Research & Development Center Toshiba Corporation
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Matsumura Naoki
Department Of Applied Physics Hokkaido University
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Matsumura N
Kyoto Inst. Technol. Kyoto Jpn
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SCHIMIZU Tatsuo
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
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Schimizu T
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Schimizu Tatsuo
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Yamaguchi Takeshi
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Fukushima N
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Ishikawa Hiroshi
Fujitsu Laboratories Limited
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TAKATSU Motomu
Fujitsu Laboratories Ltd.
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Wada Osamu
Materials & Electronic Device Laboratory Mitsubishi Electric Corporation
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Akiyama Tomoyuki
Qd Laser Inc.
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武藤 俊介
大阪大学教養部
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NUMATA Ken
Kanagawa High-Technology Foundation
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YABUTA Konami
Kanagawa High-Technology Foundation
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HATORI Nobuyuki
Fujitsu Laboratories Ltd.
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AKIYAMA Tomoyuki
Femtosecond Technology Research Association
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YAMAGUCHI Masaomi
Fujitsu Limited
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OHSHIMA Toshio
Fujitsu Laboratories Ltd.
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SASAKURA Hirotaka
Department of Applied Physics, Faculty of Engineering Hokkaido University
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NAKAGAWA Yuji
Tokyo Institute of Technology
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SUGAWARA Mitsuru
Tokyo Institute of Technology
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NAKATA Yoshiaki
Optical Semiconductor Devices Labs, Fujitsu Laboratories Ltd.
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ISHIKAWA Hiroshi
Tokyo Institute of Technology
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ENDOH Akira
Fujitsu Laboratories Ltd.
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ISHIGURE Tsuyoshi
Department of Applied Physics, Hokkaido University
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SHIRAMINE Ken-ichi
Department of Applied Physics, Hokkaido University
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HORISAKI Yasunobu
Department of Applied Physics, Hokkaido University
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SUZUKI Dai
Department of Applied Physics, Hokkaido University
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ITOH Satoru
Department of Applied Physics, Hokkaido University
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EBIKO Yoshiki
Department of Applied Physics, Hokkaido University
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Kataoka Mayako
Department of Applied Physics, Hokkaido University
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SHOJI Hajime
Fujitsu Laboratories Ltd.
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NISHIKAWA Yuji
Fujitsu Laboratories Ltd.
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Tackeuchi Atsushi
Department Of Applied Physics Waseda University
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Kuroda Takamasa
Department of Applied Physics, Waseda University
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Wada Osamu
FESTA Laboratories
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Yamaguchi Masaomi
Fujitsu Lab. Ltd. Kanagawa Jpn
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Sasakura Hirotaka
Department Of Applied Physics Faculty Of Engineering Hokkaido University
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Ikegawa Sumio
Corporate Research & Development Center Toshiba Corporation
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Wada O
The Department Of Electrical And Electronics Engineering Kobe University
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Wada Osamu
Fujitsu Laboratories
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OHSHIMA Takeshi
Japan Atomic Energy Research Institute
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SUZUKI Motofumi
Department of Global Agricultural Sciences, Graduate School of Agricultural and Life Sciences
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Wada O
The Femtosecond Technology Research Association:the Kobe University.
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Itoh Satoru
Department Of Applied Physics Hokkaido University
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Itoh S
Futaba Corp. Chiba Jpn
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Ebiko Y
Fujitsu Lab. Ltd. Atsugi Jpn
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Ebiko Yoshiki
Department Of Applied Physics Hokkaido University
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Kimura Kenji
Department of Engineering Science, Kyoto University
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FUKUSHIMA Noburu
Corporate R&D Center, Toshiba Corporation
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Yasuda Naoki
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.
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Kimura Kenji
Dep. Of Micro Engineering Kyoto Univ.
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SATAKE Hideki
Advanced LSI Technology Laboratory Research & Development Center, Toshiba Co.
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NAKAJIMA Kaoru
Department of Micro Engineering, Kyoto University
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JOUMORI Shinji
Department of Engineering Physics and Mechanics, Kyoto University
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NAKAYAMA Kohei
Corporate Research & Development Center, Toshiba Corporation
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Nakayama Kohei
Corporate Research & Development Center Toshiba Corporation
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Yoshiki Masahiko
Toshiba Nanoanalysis Corporation
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Horisaki Yasunobu
Department Of Applied Physics Hokkaido University
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Wada Osamu
The Femtosecond Technology Research Association:the Kobe University.
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Suzuki Dai
Department Of Applied Physics Hokkaido University
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Itoh S
Kyushu Univ. Kasuga Jpn
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Satake Hideki
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Joumori Shinji
Department Of Engineering Physics And Mechanics Kyoto University
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Ohshima T
Oki Electric Ind. Co. Ltd. Tokyo Jpn
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小崎 完
北大
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Kozaki Tamotsu
Hokkaido University Graduate School Of Engineering Division Of Energy And Environmental Systems
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Kataoka Mayako
Department Of Applied Physics Hokkaido University
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Takashima Akira
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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SUZUKI Masamichi
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
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Nakajima Kaoru
Department Of Engineering Physics And Mechanics Kyoto University
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Suzuki Motofumi
Department Of Global Agricultural Sciences Graduate School Of Agricultural And Life Science The Univ
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Kozaki T
Div. Of Energy And Environmental Systems Graduate School Of Engineering Hokkaido Univ.
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Kozaki Tamotsu
Division Of Energy And Environmental Systems Graduate School Of Engineering Hokkaido University
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Ishigure Tsuyoshi
Department Of Applied Physics Hokkaido University
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Kuroda Takamasa
Department Of Applied Physics Waseda University
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Suzuki Masamichi
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Kimura Kenji
Deparment Of Engineering Science Kyoto University
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Tackeuchi A
Department Of Applied Physics Waseda University
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Kimura Kenji
Department of Engineering Physics and Mechanics, Kyoto University, Kyoto 606-8501, Japan
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Ikegawa Sumio
Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan
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Yamaguchi Takeshi
Advanced LSI Technology Laboratory, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Nishikawa Yukie
Advanced LSI Technology Laboratory, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Nisikawa Yukie
Corporate Research & Development Center, Toshiba Corporation
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Satou Nobutaka
Toshiba Nanoanalysis Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Suzuki Motofumi
Department of Engineering Physics and Mechanics, Kyoto University, Kyoto 606-8501, Japan
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Itoh Satoru
Department of Applied Chemistry, Nagoya Institute of Technology
著作論文
- Size, density, and shape of InAs quantum dots in closely stacked multilayers grown by the Stranski-Krastanow mode
- Lattice Deformation and Ga Diffusion Concerning InAs Self-Assembled Quantum Dots on GaAs(100) as a Function of Growth Interruption Time
- Quantum-Dot Semiconductor Optical Amplifiers for High Bit-Rate Signal Processing over 40Gbit/s
- A Model of Carrier Capturing and Recombination Process in Quantum-Dot System : Influence of Excitation Power on Spontaneous Emission Intensity and Lifetime
- InAs Self-Assembled Quantum Dots Coupled with GaSb Monolayer Quantum Well
- Lasing Characteristics and Carrier Dynamics of 1.3-μm InGaAs/GaAs Quantum Dot Lasers
- Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Effect of Size Fluctuations on the Photoluminescence Spectral Linewidth of Closely Stacked InAs Self-Assembled Quantum Dot Structures
- Crystallographic Properties of Closely Stacked InAs Quantum Dots Investigated by Ion Channeling
- Threading Dislocations in Multilayer Structure of InAs Self-Assembled Quantum Dots
- Dynamic Properties of InAs Self-Assembled Quantum Dots Evaluated by Capacitance-Voltage Measurements
- Interdiffusion between InAs Quantum Dots and GaAs Matrices
- Narrow Photoluminescemce Line Width of Closely Stacked InAs Self-Assembled Quantum Dot Structures
- Self-Formed InGaAs Quantum Dot Lasers with Multi-Stacked Dot Layer
- Electron Spin-relaxation Dynamics in GaAs/AlGaAs Quantum Wells and InGaAs/InP Quantum Wells
- Quantum Dots Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Structure of Ultrathin Epitaxial CeO_2 Films Grown on Si(111)
- Electrical Properties of Single Crystalline CeO_2 High-k Gate Dielectrics Directly Grown on Si(111)
- Direct Growth of Single Crystalline CeO_2 High-k Gate Dielectrics
- High quality La aluminates/Si (100) interface realized by passivation of Si dangling bonds with one monolayer epitaxial SrSi_2
- Enhancement of Dielectric Constant due to Expansion of Lattice Spacing in CeO_2 Directly Grown on Si(111)
- Structure of Ultrathin Epitaxial CeO2 Films Grown on Si(111)