Fukushima N | Corporate Research & Development Center Toshiba Corporation
スポンサーリンク
概要
関連著者
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Fukushima N
Corporate Research & Development Center Toshiba Corporation
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Fukushima N
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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FUKUSHIMA Noburu
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
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Ando K
Advanced Research Laboratory R&d Center Toshiba Corporation
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Fukushima Noburu
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Niu H
Osaka Inst. Technol. Osaka Jpn
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FUKUSHIMA Noburu
TOSHIBA CORPORATION Research and Development Center
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Abe Kazuhide
Corporate R&d Center Toshiba Corporation
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NIU Hiromi
TOSHIBA CORPORATION Research and Development Center
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Niu Hiromi
Toshiba Corporation Research & Development Center
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Kawakubo Takashi
Corporate R&d Center Toshiba Corporation
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TANAKA Shigenori
Advanced Research Laboratory,Research and Development Center,Toshiba Corporation
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ANDO Ken
Advanced Research Laboratory,Research and Development Center,Toshiba Corporation
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ANDO Ken
TOSHIBA CORPORATION Research and Development Center
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Yanase N
Corporate R&d Center Toshiba Corporation
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Ando Ken
Advanced Research Laboratory R & D Center Toshiba Corporation
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Tanaka Shigenori
Advanced Research Laboratory Research And Development Center Toshiba Corporation
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TANAKA Shigenori
Advanced Research Laboratory, R&D Center, Toshiba Corporation
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Tanaka Shigenori
Advanced Materials and Devices Laboratory, Corporate Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Nakata Y
Fujitsu Ltd. Atsugi Jpn
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Nishikawa Y
Materials And Devices Research Laboratories Toshiba Corporation
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Nishikawa Yukie
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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FUKUSHIMA Noburu
Corporate R&D Center, Toshiba Corporation
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NIU Hiromi
Advanced Research Laboratory,Research and Development Center,Toshiba Corporation
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Niu Hiromi
Advanced Research Laboratory Research And Development Center Toshiba Corporation
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Abe Kazuhide
Material And Devices Research Laboratories R&d Center Toshiba Corporation
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阿部 和秀
(株)東芝 研究開発センター
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Yasuda N
Tokyo Inst. Technol. Tokyo
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Nishikawa Y
Toshiba Corp. Kawasaki Jpn
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Nishikawa Yukie
Corporate Research & Development Center Toshiba Corporation
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ABE Kazuhide
Advanced Discrete Semiconductor Technology Laboratory, Corporate Research & Development Center, Tosh
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YANASE Naoko
Advanced Discrete Semiconductor Technology Laboratory, Corporate Research & Development Center, Tosh
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KAWAKUBO Takashi
Advanced Discrete Semiconductor Technology Laboratory, Corporate Research & Development Center, Tosh
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ABE Kazuhide
Corporate R&D Center, Toshiba Corporation
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ABE Kazuhide
Materials and Devices Research Labs., R&D Center, Toshiba Corporation
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FUKUSHIMA Noburu
Materials and Devices Research Labs., R&D Center, Toshiba Corporation
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Yasuda Naoki
Corporate Research & Development Center Toshiba Corporation
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MURASE Satoru
Toshiba R&D Center
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IZUHA Mitsuaki
Microelectronics Engineering Laboratory, Semiconductor Company, Toshiba Corporation
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Yamada Y
Department Of Electrical And Electronic Engineering Yamaguchi University
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YAMADA Yutaka
Toshiba R & D Center
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YOSHINO Hisashi
Toshiba R & D Center
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Murase S
Toshiba Corporation
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Murase Satoru
Toshiba R & D Center
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阿部 和秀
東芝・総合研究所
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Komatsu S
Waseda Univ. Tokyo Jpn
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Izuha Mitsuaki
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
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Abe Kazuhide
Metals And Ceramics Laboratory Toshiba R&amo;d Center Toshiba Corporation
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Abe Kazuhide
Research And Development Center Toshiba Corporation
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Abe Kazuhide
Materials And Devices Research Laboratories R&d Center Toshiba Corporation
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阿部 和秀
(株)東芝研究開発センター Lsi基盤技術ラボラトリー
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阿部 和秀
(株)東芝
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Yoshino Hisashi
Advanced Research Laboratory R & D Center Toshiba Corporation
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Matsushita Daisuke
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Matsushita Daisuke
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Hieda Katsuhiko
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
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Ikegawa Sumio
Corporate Research & Development Center Toshiba Corporation
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Aoyama T
Toshiba Corp. Yokohama Jpn
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Aoyama T
Hitachi Ltc. Ibaraki Jpn
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YASUMOTO Takaaki
Corporate R&D Center, Toshiba Corporation
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YANASE Naoko
Corporate R&D Center, Toshiba Corporation
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KOMATSU Shuichi
Materials and Devices Research Labs., R&D Center, Toshiba Corporation
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ABE Kazuhide
The authors are with the Materials and Devices Research Laboratories, Toshiba Corporation
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YANASE Naoko
The authors are with the Materials and Devices Research Laboratories, Toshiba Corporation
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KOMATSU Shuichi
The authors are with the Materials and Devices Research Laboratories, Toshiba Corporation
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SANO Kenya
The authors are with the Materials and Devices Research Laboratories, Toshiba Corporation
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FUKUSHIMA Noburu
The authors are with the Materials and Devices Research Laboratories, Toshiba Corporation
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KAWAKUBO Takashi
The authors are with the Materials and Devices Research Laboratories, Toshiba Corporation
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TAKENO Shiro
TOSHIBA CORPORATION Research and Development Center
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NAKAMURA Shin-ichi
TOSHIBA CORPORATION Research and Development Center
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Yasuda Naoki
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.
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YAMAGUCHI Takeshi
Advanced LSI Technology Laboratory, Toshiba Corporation
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NAKAYAMA Kohei
Corporate Research & Development Center, Toshiba Corporation
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Aoyama Tomonori
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
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Nakayama Kohei
Corporate Research & Development Center Toshiba Corporation
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NIWA Shoko
Microelectronics Engineering Laboratory, Semiconductor Company, Toshiba Corporation
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KIYOTOSHI Masahiro
Microelectronics Engineering Laboratory, Semiconductor Company, Toshiba Corporation
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YAMAZAKI Souichi
Microelectronics Engineering Laboratory, Semiconductor Company, Toshiba Corporation
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EGUCHI Kazuhiro
Microelectronics Engineering Laboratory, Semiconductor Company, Toshiba Corporation
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ARIKADO Tunetoshi
Microelectronics Engineering Laboratory, Semiconductor Company, Toshiba Corporation
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Sasaki Hideyuki
Toshiba Corporation Research & Development Center
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NAKAYAMA Shigeo
Toshiba R & D Center
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HAYASHI Masaru
Toshiba Corporation, Research & Development Center
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Niwa Shoko
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
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Arikado T
Semiconductor Leading Edge Technologies Inc.
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Sano K
Ntt Photonics Laboratories Ntt Corporation
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Nakayama Shigeo
Toshiba R & D Center
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Takashima Akira
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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SCHIMIZU Tatsuo
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
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SUZUKI Masamichi
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
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Schimizu T
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Schimizu Tatsuo
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Yamaguchi Takeshi
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Yamazaki S
Toshiba Corp. Yokohama Jpn
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Eguchi K
Tokyo Metropolitan Univ. Tokyo Jpn
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Yamaguchi Takeshi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Yanase Naoko
Corporate R&d Center Toshiba Corporation
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IZUHA Mitsuaki
Material and Devices Research Laboratories, R&D Center, Toshiba Corporation
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Yasumoto Takaaki
Corporate R&d Center Toshiba Corporation
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TAKENO Shiro
Advanced Research Laboratory, R&D Center, Toshiba Corporation
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Komatsu Shuichi
Materials And Devices Laboratory R & D Center Toshiba Corporation
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Kiyotoshi Masahiro
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
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Hayashi Masaru
Toshiba Corporation Research & Development Center
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Suzuki Masamichi
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Arikado Tunetoshi
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
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Ikegawa Sumio
Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan
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Nisikawa Yukie
Corporate Research & Development Center, Toshiba Corporation
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TAKENO Shiro
Advanced Research Laboratory, R&D Center, Toshiba Corporation
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Takeno Shiro
Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
著作論文
- Influence of Gas Pressure on Sputtering Deposition of Epitaxial BaTiO_3 Thin Films
- Improvement of Ferroelectric Hysteresis Curves in Epitaxial BaTiO_3 Film Capacitors by 2-Step Deposition(Special Issue on Nonvolatile Memories)
- Thickness Dependence of Ferroelectricity in Heteroepitaxial BaTiO_3 Thin Film Capacitors
- Dielectric and Ferroelectric Properties of Heteroepitaxial Ba_xSr_TiO_3 Films Grown on SrRuO_3/SrTiO_3 Substrates(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Relationship between Bond Valence Sums and Pressure Effects on T_c of Oxide Superconductors
- Metal-Insulator Transition in Layered-Perovskite Sr_3V_2O_7
- Bond-Valence-Sum Study on Possible Candidates for High-T_c Oxide Superconductors
- Periodicity Change in Structural Modulation in Bi_2Sr_2Ca_RE_yCu_2O_ (RE = Y, Nd) System
- Effect of Oxygen Content and Sr/Ca Ratio on Superconducting Properties in Bi_2Sr_Ca_Cu_2O : Electrical Properties Condensed Matter
- Electrical and Magnetic Properties in Bi_2Sr_2Ca_Y_xCu_2O : Electrical Properties Condensed Matter
- Transition to an Insulator from a Superconductor due to Substitution of Ca by Rare-earth Elements in Bi_4Sr_4RE_2Cu_4O_ (RE=Nd, Eu, Y) : Electrical Properties of Condensed Matter
- Electrical Properties of Single Crystalline CeO_2 High-k Gate Dielectrics Directly Grown on Si(111)
- Direct Growth of Single Crystalline CeO_2 High-k Gate Dielectrics
- Influence of Lattice Distortion and Oxygen Defects in BST Films for Memory Capacitors
- Critical Current Density of Wire Type Y-Ba-Cu Oxide Superconductor
- Oxygen Deficiency and Cu Valence States of Supereonducting Y-Ba-Cu Oxide
- High quality La aluminates/Si (100) interface realized by passivation of Si dangling bonds with one monolayer epitaxial SrSi_2
- Effects of Ambient Gas on Dielectric Constant of Sputtered SrTiO_3 Epitaxial Thin Films
- Electrical Properties of All-Perovskite Oxide (SrRuO_3/Ba_xSr_TiO_3/SrRuO_3) Capacitors
- New Layered Vanadium Oxide with Negative Magnetization, Sr_4V_3O_