Improvement of Ferroelectric Hysteresis Curves in Epitaxial BaTiO_3 Film Capacitors by 2-Step Deposition(Special Issue on Nonvolatile Memories)

概要

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A 2-step deposition technique was introduced in the heteroepitaxial growth of barium titanate(BaTiO_3)thin films. Heteroepitaxial BaTiO_3 films were prepared on a SrRuO_3/SrTiO_3 substrate by radio frequency(RF)magnetron sputtering with three kinds of deposition method:low RF-power deposition, 2-step deposition, and high power deposition. The crystallographic and ferroelectric properties were evaluated for the heteroepitaxial films. When the epitaxial capacitor was prepared by the 2-step deposition dechnique, the ferroelectric remanent polarization, 2Pr, was maximized. The optimized deposition condition to improve the crystal quality is discussed in terms of damage and diffusion, which could be introduced into the oxide films during the epitaxial growth, and controlled by the RF-power and deposition time, respectively.
社団法人電子情報通信学会の論文
2001-06-01