KAWAKUBO Takashi | Advanced Discrete Semiconductor Technology Laboratory, Corporate Research & Development Center, Tosh
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概要
- 同名の論文著者
- Advanced Discrete Semiconductor Technology Laboratory, Corporate Research & Development Center, Toshの論文著者
関連著者
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KAWAKUBO Takashi
Advanced Discrete Semiconductor Technology Laboratory, Corporate Research & Development Center, Tosh
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ABE Kazuhide
Advanced Discrete Semiconductor Technology Laboratory, Corporate Research & Development Center, Tosh
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YANASE Naoko
Advanced Discrete Semiconductor Technology Laboratory, Corporate Research & Development Center, Tosh
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Kawakubo Takashi
Corporate R&d Center Toshiba Corporation
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Yanase N
Corporate R&d Center Toshiba Corporation
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Abe Kazuhide
Corporate R&d Center Toshiba Corporation
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YASUMOTO Takaaki
Advanced Discrete Semiconductor Technology Laboratory, Corporate Research & Development Center, Tosh
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FUKUSHIMA Noburu
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
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Yoshiki Masahiko
Material Analysis Group Corporate Research And Development Center Toshiba Corp.
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Ohara Ryoichi
Advanced Lsi Technology Laboratory Corporate Research And Development Center Toshiba Corp.
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Sano Kenya
Advanced Lsi Technology Laboratory R&d Center Toshiba Corporation
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Fukushima N
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Fukushima Noburu
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Fukushima N
Corporate Research & Development Center Toshiba Corporation
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YASUTOMO Takaaki
Advanced LSI Technology Laboralory, Corporate R&D Center, Toshiba Corporation
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SCHIMIZU Tatsuo
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
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Schimizu Tatsuo
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Schimizu Tatsuo
Advanced Lsi Technology Laboratory Corporate Research And Development Center Toshiba Corp.
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OHARA Ryoichi
Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corp.
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SANO Kenya
Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corp.
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Yasumoto Takaaki
Corporate R&d Center Toshiba Corporation
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Kawakubo Takashi
Advanced Lsi Technology Laboratory Corporate Research And Development Center Toshiba Corporation
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Kawakubo Takashi
Advanced Lsi Technology Laboratory R&d Center Toshiba Corporation
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Shimizu Tatsuo
Advanced Lsi Technology Laboratory Corporate Research And Development Center Toshiba Corporation
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YANASE Naoko
Advanced LSI Technology Laboralory, Corporate R&D Center, Toshiba Corporation
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Yoshiki Masahiko
Material Analysis Group, Corporate Research and Development Center, Toshiba Corp., 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Kawakubo Takashi
Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corp., 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Sano Kenya
Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corp., 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Schimizu Tatsuo
Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corp., 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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KAWAKUBO Takashi
Advanced LSI Technology Laboralory, Corporate R&D Center, Toshiba Corporation
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ABE Kazuhide
Advanced LSI Technology Laboralory, Corporate R&D Center, Toshiba Corporation
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Kawakubo Takashi
Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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YASUTOMO Takaaki
Advanced LSI Technology Laboralory, Corporate R&D Center, Toshiba Corporation
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Abe Kazuhide
Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
著作論文
- Nonswitching Layer Model for Voltage Shift Phenomena in Heteroepitaxial Barium Titanate Thin Films
- Improvement of Ferroelectric Hysteresis Curves in Epitaxial BaTiO_3 Film Capacitors by 2-Step Deposition(Special Issue on Nonvolatile Memories)
- Bistable States of Ferroelectric Hysteresis Loops in a Heteroepitaxial BaTiO_3 Thin Film Capacitor
- Epitaxial Growth of BaTiO_3 Thin Films by High Gas Pressure Sputtering
- Asymmetric Switching of Ferroelectric Polarization in a Heteroepitaxial BaTiO_3 Thin Film Capacitor
- Thickness Dependence of Ferroelectricity in Heteroepitaxial BaTiO_3 Thin Film Capacitors
- Electrical Properties and Thermodynamic Stability of Sr(Ti_, Ru_x)O_3 Thin Films Deposited by Inductive-Coupling-Plasma-Induced RF Magnetron Sputtering
- Growth of Epitaxial SrTiO_3 on Epitaxial(Ti, Al)N/Si(100)Substrate Using Ti-Buffer Layer(Special Issue on Nonvolatile Memories)
- First-Principles Study on Electronic Structure and Thermodynamic Stability of Sr(Ti,Ru)O_3 : Electrical Properties of Condensed Matter
- Electrical Properties and Thermodynamic Stability of Sr(Ti1-x,Rux)O3 Thin Films Deposited by Inductive-Coupling-Plasma-Induced RF Magnetron Sputtering
- Bistable States of Ferroelectric Hysteresis Loops in a Heteroepitaxial BaTiO3 Thin Film Capacitor