Epitaxial Growth of BaTiO_3 Thin Films by High Gas Pressure Sputtering
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-09-30
著者
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Kawakubo Takashi
Corporate R&d Center Toshiba Corporation
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ABE Kazuhide
Advanced Discrete Semiconductor Technology Laboratory, Corporate Research & Development Center, Tosh
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YANASE Naoko
Advanced Discrete Semiconductor Technology Laboratory, Corporate Research & Development Center, Tosh
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YASUMOTO Takaaki
Advanced Discrete Semiconductor Technology Laboratory, Corporate Research & Development Center, Tosh
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KAWAKUBO Takashi
Advanced Discrete Semiconductor Technology Laboratory, Corporate Research & Development Center, Tosh
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YASUTOMO Takaaki
Advanced LSI Technology Laboralory, Corporate R&D Center, Toshiba Corporation
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Yanase N
Corporate R&d Center Toshiba Corporation
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YANASE Naoko
Advanced LSI Technology Laboralory, Corporate R&D Center, Toshiba Corporation
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KAWAKUBO Takashi
Advanced LSI Technology Laboralory, Corporate R&D Center, Toshiba Corporation
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ABE Kazuhide
Advanced LSI Technology Laboralory, Corporate R&D Center, Toshiba Corporation
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YASUTOMO Takaaki
Advanced LSI Technology Laboralory, Corporate R&D Center, Toshiba Corporation
関連論文
- Nonswitching Layer Model for Voltage Shift Phenomena in Heteroepitaxial Barium Titanate Thin Films
- Influence of Gas Pressure on Sputtering Deposition of Epitaxial BaTiO_3 Thin Films
- Improvement of Ferroelectric Hysteresis Curves in Epitaxial BaTiO_3 Film Capacitors by 2-Step Deposition(Special Issue on Nonvolatile Memories)
- Bistable States of Ferroelectric Hysteresis Loops in a Heteroepitaxial BaTiO_3 Thin Film Capacitor
- Epitaxial Growth of BaTiO_3 Thin Films by High Gas Pressure Sputtering
- Asymmetric Switching of Ferroelectric Polarization in a Heteroepitaxial BaTiO_3 Thin Film Capacitor
- Thickness Dependence of Ferroelectricity in Heteroepitaxial BaTiO_3 Thin Film Capacitors
- Ferroelectric Properties of SrRuO_3/(Ba,Sr)TiO_3/SrRuO_3 Epitaxial Capacitor
- Dielectric and Ferroelectric Properties of Heteroepitaxial Ba_xSr_TiO_3 Films Grown on SrRuO_3/SrTiO_3 Substrates(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Epitaxial Growth of Ti_Al_xN Buffer Layer for a Ferroelectric (Ba, Sr) TiO_3 Capacitor on Si Substrate
- Asymmetric Ferroelectricity and Anomalous Current Conduction in Heteroepitaxial BaTiO_3 Thin Films
- Ferroelectric Properties in Heteroepitaxial Ba_Sr_TiO_3 Thin Films on SrRuO_3/SrTiO_3 Substrates
- Electrical Properties and Thermodynamic Stability of Sr(Ti_, Ru_x)O_3 Thin Films Deposited by Inductive-Coupling-Plasma-Induced RF Magnetron Sputtering
- Heteroepitaxial TiN Film Growth on Si (111) by Low Energy Reactive Ion Beam Epitaxy
- Heteroepitaxial TiN Films Growm by Reactive Ion Beam Epitaxy at Room Temperature
- Growth of Epitaxial SrTiO_3 on Epitaxial(Ti, Al)N/Si(100)Substrate Using Ti-Buffer Layer(Special Issue on Nonvolatile Memories)
- First-Principles Study on Electronic Structure and Thermodynamic Stability of Sr(Ti,Ru)O_3 : Electrical Properties of Condensed Matter
- Electrical Properties and Thermodynamic Stability of Sr(Ti1-x,Rux)O3 Thin Films Deposited by Inductive-Coupling-Plasma-Induced RF Magnetron Sputtering
- Bistable States of Ferroelectric Hysteresis Loops in a Heteroepitaxial BaTiO3 Thin Film Capacitor